基于硅/二维层状材料异质结的红外光电探测器研究进展

doi:10.11896/cldb.22030194

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Abstract Infrared light, an electromagnetic wave with a frequency range that lies between that of microwave and visible light, is widely used in the fields of optical communication, artificial intelligence, medical treatment, military detection, and aerospace. Infrared light is difficult to detect because it is invisible to the human eye. The cutoff wavelength (about 1.1 mm) of silicon-based photodetectors are limited by the bandgap of silicon (about 1.12 eV). In recent years, researchers have discovered novel two-dimensional layered materials with a tunable bandgap, high carrier mobility, wide spectral response, low dark current, and high stability. Additionally, their micro-nano processing technology is compatible with CMOS technology. Combining silicon with two-dimensional layered materials can efficiently expand the detection band of silicon photodetectors to the infrared light band with wavelengths exceeding 1.1 mm. In this review, we focus on the current reports related to silicon/two-dimensional layered materials heterojunctions. We introduce the application of silicon heterojunction infrared photodetectors with two-dimensional materials, such graphene, black phosphorus, and two-dimensional transition metal chalcogenides; we also present the performance of these devices. Finally, based on recent research, the outlook on heterojunction infrared photodetectors based on silicon/two-dimensional layered material is presented. It is believed that heterojunction infrared photodetectors based on silicon/two-dimensional material have the potential to realize advanced applications in the future.

Key words： silicon two-dimensional layered material heterojunction infrared photodetector

Published: Online: 2024-01-16

CLC number:

TN215

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	HE Yifei
	YANG Deren
	PI Xiaodong

Cite this article:

HE Yifei,YANG Deren,PI Xiaodong. Research Progress on Heterojunction Infrared Photodetectors Based on Silicon/Two-dimensional Layered Materials[J]. Materials Reports, 2024, 38(1): 22030194-9.

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http://www.mater-rep.com/EN/10.11896/cldb.22030194 OR http://www.mater-rep.com/EN/Y2024/V38/I1/22030194

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