原子层沉积法制备SnO<sub>2</sub>薄膜及其对钙钛矿电池性能的影响

doi:10.11896/cldb.20110236

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Abstract In this work, tin oxide (SnO₂) thin film was prepared through atomic layer deposition technology with monocrystalline silicon as substrate, te-trakis (dimethylamino) tin and water as the precursor sources. Its optical, electrical properties and application in perovskite solar cell devices were characterized. Through adjusting the temperature of substrates, the effect of deposition temperature on SnO₂ film deposition rate, and electrical and optical properties were studied in detail, and the performance of perovskite solar cells was analyzed. The results indicate that with tetrakis (dimethylamino) tin and water as precursors, the deposition rate decreases gradually with the increase of temperature, and the atomic layer deposition temperature window is between 120 ℃ and 250 ℃; the refractive index also increases with temperature. As the temperature increases gradually, the band gap decreases; the higher the deposition temperature is, the higher the surface oxygen vacancy concentration is. The SnO₂ thin film deposited at 160 ℃ was used to prepare the perovskite solar cell device, which obtained a champion efficiency (18.68%), with a cut-off voltage of 1.077 V, a short-circuit current density of 23.67 mA/cm² and a fill factor of 73.3%. The device has less hysteresis effect.

Key words： atomic layer deposition tin oxide thin film growth rate oxygen vacancy perovskite solar cell

Published: Online: 2022-04-07

CLC number:

TB321

Fund:National Key R & D Program of China (2018YFF0109100) and the National Natural Science Foundation of China (61427901).

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	Articles by authors
	MING Shuaiqiang
	WANG Zhejia
	WU Lujie
	FENG Jiaheng
	GAO Yazeng
	LU Weier
	XIA Yang

Cite this article:

MING Shuaiqiang,WANG Zhejia,WU Lujie, et al. SnO₂ Thin Film Prepared by Atomic Layer Deposition Technology and Its Effect on the Performance of Perovskite Solar Cells[J]. Materials Reports, 2022, 36(7): 20110236-6.

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http://www.mater-rep.com/EN/10.11896/cldb.20110236 OR http://www.mater-rep.com/EN/Y2022/V36/I7/20110236

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