| METALS AND METAL MATRIX COMPOSITES |
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| An Overview on Linear Giant Magnetoresistance Materials of Telluride |
| CAO Mingxing1,2, Ma Liwen1,2, XI Xiaoli1,2, WANG Zhihong1,2
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1 National Engineering Laboratory for Industrial Big-data Application Technology, Beijing University of Technology, Beijing 100124, China
2 Key Laboratory of Advanced Functional Materials, Education Ministry of China, College of Materials Science and Engineering, Beijing University of Techno-logy, Beijing 100124, China |
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Abstract In recent years, the resistance of materials with large magnetoresistance varies significantly with the applied magnetic field, which is a key factor in modern electronic equipment. Giant magnetoresistance telluride has unpredictable large unsaturated magnetoresistance and ultra-high migration. Characteristics such as rate and anomalous Hall effect can be used in strong magnetic field detection, information recording, and magnetoresistive devices, such as hard disk drives in computers, which have important scientific significance and broad application prospects.
The metal tellurium compound with quasi-two-dimensional features, non-planar topological band structure, and the one-dimensional tellurium silver compound as an important material of the unsaturated linear giant magnetoresistive material system have been paid attention to by researc-hers. However, at present, there are still some problems in the material, mainly reflected in: (ⅰ) synthesis. At present, large-scale production of high-quality large-area thin-layer and bulk materials has not been realized, which limits its development and application. (ⅱ) Performance and structure. Excellent properties such as giant magnetoresistance, thermoelectric properties, pressure-induced superconductivity, and low-energy light absorption have been studied. However, the carrier concentration is adjusted by doping and the like to improve the giant magnetoresistance performance has not been thoroughly analyzed.
In recent years, researchers have made significant progress in research and preparation of performance problems that have to be solved. It has been proven by the use of top-down techniques that it is possible to produce layered materials at low cost, while bottom-up techniques are currently widely used, such as chemical vapor deposition, flux method and other methods, which can be prepared with high-quality materials with few defects. In terms of magnetoresistance performance, the anisotropic magnetoresistance of tellurium linear giant magnetoresistive materials strongly depends on the angle and temperature. When the orientation of magnetic field, electric field and crystal axis are different, the value of magnetoresistance is very different. The magnetoresistance material is as high as 1 300 000% at a low temperature of 0.53 K and a high magne-tic field of 60 T. In terms of phase structure, Transition metal telluride is relatively stable in 2H phase or T, T′ and Td distortion, and can induce reversible phase transition. In terms of low-energy electronic structure, the size and number of electron-hole pockets near the fermi surface, which can be the main reason for explaining the main characteristics of the giant magnetoresistance effect.
In this paper, two-dimensional MoTe2, WTe2 and one-dimensional Ag2Te materials are represented. The chemical preparation methods of the linear giant magnetoresistance materials in the past years are reviewed, as well as the close relationship between properties and structures. The advantages and disadvantages of preparation methods of linear magnetoresistance materials with different dimensions are compared and proposed. We discuss using the design and synthesis strategy of materials such as crystal anisotropy to realize chemical preparation. The relationship between the magnetoresistance properties and the structure of crystals of this kind of materials is discussed. It summarizes its significance in optoelectronic applications. The potential applications of the material in electronic devices can be stimulated by doping and modification in a pro-mising way.
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Published: 24 June 2020
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| Fund:National Natural Science Foundation of China (51621003), National Key R&D Program of China (2017YFB0305800), Scie-nce and Technology Project of Beijing Municipal Education Commission (KM201810005009), Beijing Municipal Natural Science Foundation (2172010) and the Construction Project for National Engineering Laboratory for Industrial Big-data Application Technology (312000522303) |
About author:: Mingxing Caoreceived her B.E. degree in material science and engineering from Beijing University of Technology in 2017. She is currently pursuing her master’s degree at the Department of Material Science and Engineering, Beijing University of Technology under the supervision of Prof. Zhihong Wang; Prof. Xiaoli Xi and A/Prof Liwen Ma. Her research has focused on the fabrication and application of telluride linear giant magnetoresistive material.
Liwen Mareceived her B.E. degree in metallurgical engineering from Central South University in 2006 and received her Ph.D. degree in metallurgical physical chemistry from Central South University in 2011. Her research interests is the theory and technology of separation and recovery to secondary metal resources, including the separation theory of waste metal materials, new technology of metal separation, and preparation of new separation materials or regenerated materials. She participated in the National 863 Projects, the National Natural Science Foundation, the Beijing Natural Science Foundation, and the projects of Beijing Scie-nce and Technology Program. She has published more than 20 papers, authorized for over 10 invention patents of China and 2 patents in the United States and Japan. |
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2020, Vol. 34 
