热力学计算指导下改进CVD法制备大面积薄层MoS<sub>2</sub>

doi:10.11896/cldb.18110101

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Abstract For the sake of determining the optimal temperature for preparing MoS₂thin layers by improved chemical vapor deposition (CVD), we calculated and analyzed the Gibbs free energy of the reaction system at various temperatures. Under the instruction of thermodynamic calculations, we prepared the MoS₂ nanosheets in a multi-temperature zone tube furnace, with the precise control of reaction temperature and deposition temperature, and explored the impact of several important reference temperatures on the growth of MoS₂. It could be found from the results that the MoS₂ thin layers prepared by improved CVD were endowed with high quality and uniform thickness, and temperature exerted phenomenal impact on the morphology, size and crystalline quality of these MoS₂samples. Especially, the increase of temperature gave rise to the enlargement of the MoS₂ area, yet MoS₂nanosheets grew into polygons when the temperature reached 850 ℃. Accordingly, 800 ℃ was determined as the optimal preparation temperature. Meanwhile, Raman spectrum, fluorescence spectrum, scanning electron microscopy and atomic force microscopy were employed to confirm the quality and sizes of MoS₂, and analytic results proved that several hundred square micron large area MoS₂ thin films with high crystalline quality and uniform thickness could be obtained at preparation temperature of 800 ℃.

Key words： thermodynamic calculation enhanced chemical vapor deposition MoS₂ Raman spectroscopy photoluminescence spectra large area thin layers

Published: 16 September 2019

CLC number:

TQ136.12

Fund:This work was financially supported by the National Natural Science Foundation of China (11772286).

About author:: Yueqiu Gongreceived his Ph.D. degree in 2006 from Wuhan University of Technology. He is currently an associate professor. He worked at Xiangtan University in June 2006. His research interests are preparation of ferroelectric films, two-dimensional materials and devices.

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	GONG Yueqiu
	SHI Xiaoyu
	LI Jingbing
	XIE Shuhong

Cite this article:

GONG Yueqiu,SHI Xiaoyu,LI Jingbing, et al. Preparing Large Area MoS₂ Thin Layers by Improved Chemical Vapor Deposition Under Instruction of Thermodynamic Calculations[J]. Materials Reports, 2019, 33(22): 3708-3711.

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http://www.mater-rep.com/EN/10.11896/cldb.18110101 OR http://www.mater-rep.com/EN/Y2019/V33/I22/3708

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