| METALS AND METAL MATRIX COMPOSITES |
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| A Review of CBRAM Development for Memory and Neuromorphic Computing Applications |
| YANG Han1,2, LIU Guozhu1,2,3,*, WEI Yidan1,2, ZHAO Wei1,2,3, WEI Yingqiang1,2, ZHOU Ying1,2, SUI Zhiyuan1,2, LIU Meijie1,2, YOU Xingyu1,2, WEI Jinghe1,2,3
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1 The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, Jiangsu, China
2 National Key Laboratory of Integrated Circuits and Microsystems, Wuxi 214035, Jiangsu, China
3 Key Laboratory of Aerospace Integrated Circuits and Microsystem, Ministry of Industry and Information Technology, Nanjing 211106, China |
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Abstract As an emerging non-volatile memory technology, conductive bridge random access memory (CBRAM) has attracted extensive attention in the semiconductor memory field in recent years. With the rapid development of applications such as the Internet of Things (IoT), wearable devices, and mobile computing, higher requirements have been imposed on the performance, power consumption, size, and cost of memories. Consequently, new-generation memory technologies like CBRAM have emerged. This paper elaborates on the basic concepts and structures of CBRAM; it conducts a detailed analysis of the formation mechanisms of conductive filaments in different dielectric layers; it compares the electrical performance differences of devices fabricated with different electrode materials and dielectric layer materials; it introduces the applications of CBRAM in the fields of memory and neuromorphic computing; and it summarizes the challenges faced by CBRAMs and provides suggestions for their further development.
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Published: 10 November 2025
Online: 2025-11-10
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