AlGaN/GaN高电子迁移率晶体管传感器的栅极功能化处理方法综述

doi:10.11896/cldb.24050011

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Abstract The application of semiconductor field effect transistors (FETs) in sensors is one of the hottest research topics in the field of sensing. As represented by AlGaN/GaN high electron mobility transistors (HEMTs), FET sensors have obvious advantages in terms of detection limit, sensitivity, specificity, and ease of operation and integration. As the core technique in the device fabrication, the functionalization of the devices plays an important role in realizing the above functions and advantages, which also has great potential for the subsequent development of devices. This review summarizes the domestic and foreign research progress of the gate functionalization methods of AlGaN/GaN HEMT-based sensors for detecting gas, solution ions, and biological substances separately. Finally, we point out the limitations and shortcomings of some existing treatment methods, and look forward to some aspects of future research.

Key words： high electron mobility transistor gate functionalization processing gas detection ion-sensitive field-effect transistor biosensing

Published: 10 July 2025 Online: 2025-07-21

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TN386

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	Articles by authors
	WANG Haoyu
	GUO Yan
	ZHOU Yugang
	CHEN Dunjun
	ZHANG Rong
	ZHENG Youdou

Cite this article:

WANG Haoyu,GUO Yan,ZHOU Yugang, et al. A Technological Review on Gate Functionalization for AlGaN/GaN High Electron Mobility Transistor Sensors[J]. Materials Reports, 2025, 39(13): 24050011-10.

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https://www.mater-rep.com/EN/10.11896/cldb.24050011 OR https://www.mater-rep.com/EN/Y2025/V39/I13/24050011

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