| CARBON NANO-MATERIALS |
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| Performance Limiting Factors and Efficiency Improvement Methods of Graphene/n-Si Schottky Junction Solar Cell |
| SHANG Yudong1,2, CHEN Xiuhua1,2, LI Shaoyuan3, MA Wenhui3, WANG Yuechun1,2, XIANG Fuwei1,2
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1 Faculty of Materials Science and Engineering, Yunnan University, Kunming 650091;
2 Faculty of Physics and Astronomy, Yunnan University, Kunming 650091;
3 National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; |
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Abstract Graphene is a new type zero band gap and semi-metal material. Due to its high transmittance, good electrical conductivity, high stability, mechanical properties and other excellent performance, it could replace the traditional ITO material to prepare the new generation of graphene/n-Si Schottky junction solar cells. In this review the research progress of graphene/n-Si Schottky junction solar cells are described in detail, the reasons for affecting the performance of graphene/n-Si Schottky junction solar cells and the related optimization methods are mainly summarized and analyzed, in order to provide references for the further research and application of graphene/n-Si Schottky junction solar cells in the future.
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Published: 10 February 2017
Online: 2018-05-02
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2017, Vol. 31 
