电子束退火法制备ZnO薄膜<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.02.009

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Abstract The ZnO precursor film was prepared by sol-gel method and annealed by the electron beam which replaced the conventional furnace. The accelerating voltage was fixed at 10 kV and the annealing duration was fixed at 5 min. The annealing temperature was within the range of 600 ℃ to 900 ℃ by adjusting the focus beam current and electron beam current . The results of scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric force microscopy (PFM) showed that the annealed ZnO thin film was a kind of microcrystalline film, grew along the preferred (002) peak and presented piezoelectric effect. With the increase of annealing temperature, the grain size increased gradually, the crystallinity and orientation of thin film were better, the piezoelectric effect was more and more obvious.

Key words： electron beam annealing sol-gel ZnO thin film

Published: 25 January 2017 Online: 2018-05-02

CLC number:	TB34
	O649

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	Articles by authors
	LI Yanli
	XU Zhuang
	LI Hui
	KONG Xiangdong
	HAN Li
	ZHANG Xuena

Cite this article:

LI Yanli,XU Zhuang,LI Hui, et al. Preparation of ZnO Thin Films by Electron Beam Annealing Method[J]. Materials Reports, 2017, 31(2): 41-45.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.02.009 OR https://www.mater-rep.com/EN/Y2017/V31/I2/41

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