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Effect on Photoelectric Properties of DSSCs with Fe, Ni, Ag Ions
Implantation by MEVVA |
| LUO Jun, SHEN Xiaonan, PANG Pan, LIAO Bin, WU Xianying, ZHANG Xu
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Key Laboratory of Ministry of Education for Radiation Beam Technology and Material Modification, Institute of Nuclear
Science and Technology, Beijing Normal University, Beijing 100875 |
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Abstract Fe, Ni, Ag ions-implanted DSSCs were successfully prepared via MEVVA technology. Surface morphology and crystal structure were characterized by SEM and XRD, and photoelectric properties and charge transport were measured by I-V test and electrochemical impedance, respectively. According to band theory, the band structure of TiO2 was changed and impurity levels were introduced in band gap after metal ions implantation, which optimized the matching rate between the conduction band of TiO2 and LUMO levels of dye. Moreover, the impurity level provided extra “channel” for charge transferring, which reduced charge recombination. Compared with un-implanted cells, the photoelectric conversion efficiencies of Fe, Ni, Ag ions implanted DSSCs were improved by 13.6%,12.7% and 34.2%, respectively.
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Published: 25 March 2017
Online: 2018-05-02
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2017, Vol. 31 
