| METALS AND METAL MATRIX COMPOSITES |
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| Effect of Rare Earth Elements on Microstructure and Properties of Interconnected Materials for Microelectronic Packaging |
| SU Zilong1,2, YIN Limeng1,3,4,*, CHEN Yuhua5, ZHANG Hehe4, ZHANG Long4, ZHANG Liping4,6
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1 School of Mechanical Engineering, Xinjiang University, Urumqi 830049, China
2 Beijing Zhongke New Micro Technology Development Co., Ltd., Beijing 100012, China
3 School of Mechanical Engineering, Chongqing Three Gorges University, Chongqing 404020, China
4 School of Mechanical and Intelligent Manufacturing, Chongqing University of Science & Technology, Chongqing 401331, China
5 School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063, China
6 School of Materials Science and Engineering, Beihang University, Beijing 100191, China |
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Abstract With the development of lead-free microelectronic packaging, the comprehensive properties of packaging interconnected materials need to be further improved. It is an effective method to enhance the properties of materials by alloying modification, and rare earth materials play an important role in alloying modification. This paper focuses on the effects of rare earth elements on interconnected electronic packaging materials. The effects of rare earth elements on the microstructure and properties of Au, Cu, and Ag bonding wires, SnAgCu, SnZn and other lead-free solders, Sn-Ce coating, and Sn-RE alloy are summarized and discussed. Finally, the roles and shortcomings of rare earth elements in microelectronic packaging interconnection materials are summarized, and the research on adding trace rare earth elements in electronic packaging interconnect materials is prospected.
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Published: 25 June 2025
Online: 2025-06-19
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