Study on N-doped Cu2O Thin Film Fabricated by Low Temperature Deposition and Rapid Thermal Annealing
ZI Xingfa, YE Qing, LIU Ruiming, CHENG Man, HUANG Wenqing, HE Yongtai
Joint Research and Development Centre for New Energy Application Technology, School of Physical and Electronic Science, Chuxiong Normal University, Chuxiong 675000
Abstract: The N-doped Cu2O (Cu2O∶N) thin films were deposited by radio frequency magnetron sputtering a Cu2O target in N2 and Ar mixture atmosphere, and then the as-deposited Cu2O∶N thin films were annealed by rapid thermal annealing (RTA) in N2 atmosphere. Effects of N2 flow rates and annealing temperatures on growth behaviour, crystalline structures, surface morphologies,optical and electrical properties of Cu2O∶N thin films were investigated. The results showed that the as-deposited thin film grown at 300 ℃ substrate temperature contained only single phase of Cu2O under 12 sccm N2 flow rate. The RTA process had no influence on the crystalline structures of the as-deposited thin films in N2 atmosphere, but the crystalline quality of thin films could be sharply improved by rising annealing temperature (< 450 ℃). The thin film annealed at 400 ℃ showed good electrical properties—a Hall mo-bility (μ) of 27.8 cm2·V-1·s-1 and a resistivity (ρ) of 2.47×103 Ω·cm, which were attributed to the mitigated scattering of photo-generated carriers and the enhanced carriers transport, both induced by the improvement of crystalline quality and defect states of thin film as results of RTA. Our experiments indicated the effectiveness of low temperature sputtering deposition and RTA treatment on improving the photoelectric properties of Cu2O∶N thin films.
自兴发, 叶青, 刘瑞明, 程满, 黄文卿, 何永泰. N掺杂Cu2O薄膜的低温沉积及快速热退火研究*[J]. 《材料导报》期刊社, 2017, 31(16): 21-25.
ZI Xingfa, YE Qing, LIU Ruiming, CHENG Man, HUANG Wenqing, HE Yongtai. Study on N-doped Cu2O Thin Film Fabricated by Low Temperature Deposition and Rapid Thermal Annealing. Materials Reports, 2017, 31(16): 21-25.
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2017, Vol. 31 
