Study on the Self-propagating High Temperature Synthesis of High Purity α-SiC Powders
LUO Shengyi1, MI Guofa1, SHI Lin3, LIU Yuan2,*
1 School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan, China 2 School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China 3 Suzhou Qingyu Semiconductor Technology Corporation, Suzhou 215000, Jiangsu, China
Abstract: To fulfill the requirements of silicon carbide (SiC) single crystal growth applications, this study achieved the preparation of high-purity SiC powders via self-propagating high-temperature synthesis (SHS). Key process parameters — including temperature, pressure, Si/C molar ratio, reaction duration, and carbon source characteristics — were systematically investigated to assess their impacts on phase composition, morphological features, and purity levels. The experimental results demonstrate that α-SiC powders synthesized with finer-grained carbon sources under optimized conditions (2 080 ℃, 5 Pa pressure, Si/C molar ratio of 1.05, and 10-hour reaction duration) exhibit a monolithic crystalline structure, achieving an average particle size of 646 μm and purity levels exceeding 6N (99.999 9%). The resultant crystals displayed an average resistivity of 0.020 2 Ω·cm with complete absence of polytypic inclusions and parcel defects. Specifically, threading screw dislocation (TSD) and basal plane dislocation (BPD) densities were measured at 9 cm-2 and 22 cm-2, respectively. These metrics confirm that the optimized SHS-derived powders satisfy the stringent criteria for premium-grade SiC crystal production.
罗胜益, 米国发, 石林, 刘源. 自蔓延高温合成高纯α-SiC粉料的研究[J]. 材料导报, 2026, 40(7): 25030149-9.
LUO Shengyi, MI Guofa, SHI Lin, LIU Yuan. Study on the Self-propagating High Temperature Synthesis of High Purity α-SiC Powders. Materials Reports, 2026, 40(7): 25030149-9.
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2026, Vol. 40 
