不同界面次序CoFeMnSi多层膜的磁各向异性

doi:10.11896/cldb.23040015

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Abstract Ta/Pd/CoFeMnSi/MgO(t_MgO)/Pd multilayer films and Ta/MgO(t_MgO)/Pd multilayer films with different interface orders were prepared by magnetron sputterer, in which t_MgO was 1.0 nm, 1.2 nm, 1.4 nm, 1.6 nm, 1.8 nm, 2.0 nm, 2.2 nm and 2.4 nm, and annealed for 30 min under vacuum conditions at 300 ℃. The physical mechanism of different magnetic anisotropies caused by different interface orders was explored. The magnetic test results showed that Ta/Pd/CoFeMnSi/MgO(t_MgO)/Pd multilayer films demonstrated good perpendicular magnetic anisotropy (PMA) when t_MgO was 1.6—2.0 nm, and Ta/MgO(t_MgO)/CoFeMnSi/Pd multilayer films showed in-plane magnetic anisotropy (IMA) in the MgO thickness test range. The reasons why the Ta/MgO/CoFeMnSi/Pd structure multilayer films cannot achieve PMA are that the combination of Ta layer to O correspondingly leads to insufficient bonding of Co, Fe with O; a certain amount of oxidation of Si and Mn further reduces the content of Co-O and Fe-O bonding.

Key words： perpendicular magnetic anisotropy CoFeMnSi magnetron sputter

Published: Online: 2024-10-12

CLC number:

TB34

Fund:This work was financially supported by the National Natural Science Foundation of China (51961145305, 52171191), the International Cooperation Project of Shaanxi Key R & D Program (2021KWZ-12), and the Shaanxi Provincial University Youth Innovation Team.

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	Articles by authors
	QIAO Lihong
	YOU Caiyin
	FU Huarui
	TIAN Na
	BAI Yang
	LIU Xiaoyu

Cite this article:

QIAO Lihong,YOU Caiyin,FU Huarui, et al. Magnetic Anisotropy of CoFeMnSi Multilayer Films with Different Interface Sequences[J]. Materials Reports, 2024, 38(18): 23040015-6.

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http://www.mater-rep.com/EN/10.11896/cldb.23040015 OR http://www.mater-rep.com/EN/Y2024/V38/I18/23040015

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