宽禁带半导体β-Ga<sub>2</sub>O<sub>3</sub>单晶制备工艺研究进展

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Abstract Ga₂O₃ material has become the third-generation wide-bandgap semiconductor for power components after SiC and GaN due to its excellent optoelectronic properties, and has broad application prospects in aerospace, information communication, medical and health and other fields. The preparation methods of β-Ga₂O₃ single crystal mainly include Verneuil method, Czochralski method, edge-defined film growth method, floating zone method, vertical Bridgeman method and chemical vapor transport method. β-Ga₂O₃ is easily decomposed at high temperature, which brings certain difficulties to the preparation of large-sized and high-quality β-Ga₂O₃ single crystals. In this paper, the preparation methods of β-Ga₂O₃ single crystal were introduced in detail, and the advantages and disadvantages of each method were analyzed. The application of β-Ga₂O₃ single crystal in power devices was summarized, and certain reference for optimizing its preparation process and expanding its application prospect was provided.

Key words： β-Ga₂O₃ wide-bandgap semiconductor single crystal growth preparation method

Published: 05 June 2022 Online: 2022-06-08

CLC number:

O782

Fund:National Natural Science Foundation of China (51764033).

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	YAN Shiyu
	JI Wentao
	XIE Keqiang
	YUAN Xiaolei

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YAN Shiyu,JI Wentao,XIE Keqiang, et al. Research Progress on Preparation Technology of Wide-bandgap Semiconductor β-Ga₂O₃ Single Crystal[J]. Materials Reports, 2022, 36(Z1): 21050183-6.

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http://www.mater-rep.com/EN/ OR http://www.mater-rep.com/EN/Y2022/V36/IZ1/21050183

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