用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备

doi:10.11896/cldb.19090182

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Abstract High quality surface processing is the key to diamond bulk and film growth and device fabrication. In this paper, laser-cut HTHP diamond was used, and the surface morphology of diamond after laser cutting was analyzed by Laser Confocal Microscopes (LEXT), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and electron backscatter diffraction (EBSD), the transformation of the state during the polishing process, as well as the surface damage and crystal quality of the polished diamond. After two steps of mechanical polishing and chemical mechanical polishing, the carbonized layer and the damaged layer of the diamond surface are effectively removed by laser cutting, and the surface roughness reaches 0.764 nm. Further, a homogeneous thin film material is deposited on the HTHP diamond seed by a microwave plasma chemical vapor deposition (MPCVD) method to obtain a growth fringe rule, a low stress, a Raman half width of 2.1 cm^-1, and a XRD half width of only 87 arcsec. High quality diamond film.

Key words： laser cutting chemical mechanical polishing HTHP seed crystal MPCVD diamond single crystal

Published: 23 February 2021

CLC number:

TQ163

Fund:This work was financially supported by National Key Research and Development Plan (2018YFB0406501), Major Basic Research Projects of Shandong Natural Science Foundatio (ZR2017ZA0101), Focus on Research and Development Plan in Shandong Province(2016ZDJS01B03);Independent Project of State Key Laboratory of Crystal Material.

Corresponding Authors: penny4964@163.com

About author:: Peng Duan graduated from Ludong University in July 2017 with a bachelor's degree in engineering. In September 2017, he entered the Institute of Crystal Mate-rials of Shandong University to study and study, mainly engaged in the growth and characterization of wide band gap semiconductor materials.
Yan Peng, State Key Laboratory of Crystal Materials, Associate Professor. She graduated from Shandong University in June 2011 with a Ph.D. in Condensed Matter Physics. In the same year, She joined the State Key Laboratory of Crystal Materials and has been working on the research of wide band gap semiconductor materials, focusing on the preparation, characterization and application of SiC and diamond materials. More than 20 papers have been published in important journals at home and abroad, and more than 10 invention patents have been applied.

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	DUAN Peng
	PENG Yan
	WANG Xiwei
	HAN Xiaotong
	WANG Dufu
	HU Xiaobo
	XU Xiangang

Cite this article:

DUAN Peng,PENG Yan,WANG Xiwei, et al. Preparing HTHP Diamond with High Surface Quality for MPCVD Diamond Film Growing[J]. Materials Reports, 2021, 35(4): 4034-4037.

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http://www.mater-rep.com/EN/10.11896/cldb.19090182 OR http://www.mater-rep.com/EN/Y2021/V35/I4/4034

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