Pt对In<sub>2</sub>O<sub>3</sub>纳米线场效应晶体管电学性能的影响

doi:10.11896/cldb.19120034

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Abstract Indium oxide (In₂O₃) nanowire has great potential in transistor, storage and sensor applications owing to their suitable band width and high electron mobility. In this article, In₂O₃ nanowires were fabricated by simple chemical vapor deposition (CVD). Combining with electron beam lithography (EBL), In₂O₃ FETs (Field effect transistor, FET) were successfully prepared. Then, Pt was deposited on In₂O₃ FET with different thickness by sputtering system via different deposition time, and the effect of Pt on the electrical property of In₂O₃ FETs was investigated. The morphology, structure, optical properties and chemical valence of elements and composition of nanowires were characterized by SEM, XRD, PL and XPS. By analyzing the electrical performance of In₂O₃ FETs before and after Pt deposition, the threshold voltage (V_th) of FETs tends to drift to the right, the I_on/I_off and carrier concentration are a bit decrease but the carrier mobility is a bit increase. The shift of V_th is attributed to the electron transfer in the metal and semiconductor system. In addition, the surface defects of nanowires act as the adsorption sites can adsorb oxygen and water molecules, which will capture free electrons from the nanowires, results in the decrease of the carrier concentration. The results show that the Pt metal nanoparticles can modulate the electrical properties of In₂O₃ FETs.

Key words： In₂O₃ nanowire FET threshold voltage Pt metal nanoparticles carrier concentration

Published: 23 February 2021

CLC number:

TM23

Fund:This work was financially supported by the National Natural Science Foundation of China (11305056), the High-efficiency Solar Energy Utilization and Energy Storage Operation Control Hubei Key Laboratory Open Fund (HBSEES201901).

Corresponding Authors: xujx@hbut.edu.cn

About author:: Liming Wu is pursuing his master's degree in Hubei University of Technology, focusing on the research of semiconductor functional materials and devices.
Jinxia Xu is an associate professor of Hubei University of Technology, received her Ph. D. degree in Wuhan University. Her research has been long focused on semiconductor nanomaterials design, preparation, modification and related devices.

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	WU Liming
	XU Jinxia
	FAN Zhicheng
	MEI Fei
	ZHOU Yuanming
	LIU Lingyun

Cite this article:

WU Liming,XU Jinxia,FAN Zhicheng, et al. Effect of Pt on the Electrical Properties of Indium Oxide Nanowire Field Effect Transistors[J]. Materials Reports, 2021, 35(4): 4028-4033.

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http://www.mater-rep.com/EN/10.11896/cldb.19120034 OR http://www.mater-rep.com/EN/Y2021/V35/I4/4028

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