锗基半导体器件的界面磁阻效应和体磁阻效应

doi:10.11896/cldb.19110241

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Abstract In this work, the interface and bulk MR of the Ag/p-Ge∶Ga/Ag device were investigated. The results show that the bulk MR is much larger than the interface MR. For the interface MR effects, the applied magnetic fields have little influence on the formation and quenching of the local plasma at the interface of Ag/p-Ge∶Ga, leading to a small interface MR. For the bulk MR effects, the carrier recombination rate is accelera-ted under the applied magnetic fields, and then the carriers concentration decreases sharply, resulting in a large MR value. Further study finds that the germanium-based semiconductor device with low carrier concentration is beneficial for obtaining an excellent bulk MR effect. We also studied the effect of different magnetic field orientations on the bulk MR, and find that the bulk MR become more anisotropic at lower temperature. When T<200 K, the values of bulk MR in the perpendicular orientation are much larger than that of in the parallel orientation. For example, when T=10 K, the largest value of bulk MR in the perpendicular orientation is about 123%@1 T, which is much larger than 41%@1 T in the parallel orie-ntation. Mechanism analysis indicates that the anisotropic characteristics is derived from the geometric effect which is enhanced due to the high carrier mobility characteristic at low temperature.

Key words： Ge-based semiconductor interface magnetoresistance effect bulk magnetoresistance effect anisotropic magnetoresistance

Published: 28 January 2021

CLC number:

TM23

Fund:The National Natural Science Foundation of China (11574243, 11174231) and the Key Program of the National Natural Science Foundation of China (11834012)

About author:: Han Yureceived his M.S. degree in October 2019 from Wuhan University of Technology in engineering. From September 2017 to October 2019, he educated and learned at SKATMSP, focusing on the research of the electric transport properties and magnetoresistance effect of non-magnetic semiconductor device.
Zhigang Sunreceived his M.S. degree in 1997 at Wuhan University and Ph.D. degree in 2000 at Institute of Physics, Chinese Academy of Sciences. He started to work at SKATMSP of WUT as a full professor since 2005. His research interests include magnetic thermoelectric materials, magnetic nanomaterials and magnetoelectronics.

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	YU Han
	HE Xiong
	ZHANG Kongbin
	HE Bin
	LUO Feng
	SUN Zhigang

Cite this article:

YU Han,HE Xiong,ZHANG Kongbin, et al. Interface Magnetoresistance Effect and Bulk Magnetoresistance Effect of Germanium-based Semiconductor Devices[J]. Materials Reports, 2021, 35(2): 2069-2073.

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http://www.mater-rep.com/EN/10.11896/cldb.19110241 OR http://www.mater-rep.com/EN/Y2021/V35/I2/2069

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