Al掺杂浓度对Hf0.5Zr0.5O2薄膜铁电性能的影响

doi:10.11896/cldb.20020160

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Abstract Apulsed laser deposition (PLD) method was used to prepare thin-film capacitors of MIM structure with TiN/Al-doped Hf_0.5Zr_0.5O₂/TiN on Pt/Ti/SiO₂/Si substrates. The microstructure and electrical properties of Al∶Hf_0.5Zr_0.5O₂ film with Al doping concentration of 0% to 4% (mol fraction) were studied. On this basis, the effect of annealing temperature on the Al∶Hf_0.5Zr_0.5O₂ film was also studied. The test results show that, as the Al doping concentration increases and the annealing temperature decreases, the tetragonal phase becomes more stable, the hysteresis loop becomes narrower, and the residual polarization decreases. When the annealing temperature is 500 ℃, the Al∶Hf_0.5Zr_0.5O₂ film with doping concentration of 1.03% will induce a double-hysteresis loop characteristic similar to antiferroelectricity, and the energy storage density is higher. The analysis results show that these changes are due to the field-induced reversible phase transition between the tetragonal phase and the orthogonal phase and the redistribution of oxygen vacancies in the Al∶Hf_0.5Zr_0.5O₂ film.

Key words： pulsed laser deposition (PLD) Al-doped hafnium zirconium oxide thin film ferroelectric antiferroelectric phase transition

Published: 28 January 2021

CLC number:

TN304

About author:: Yu Qiugraduated from Chongqing University in June 2017 with a bachelor’s degree. From September 2017 to the present, she has been studying for a master’s degree at the University of Electronic Science and Technology of China since September 2017, and is mainly engaged in the research of ferroelectric materials.
Jun Zhuis a professor and doctoral supervisor of the University of Electronic Science and Technology of China. Completed undergraduate, master’s and doctoral studies in the Department of Physics, Nanjing University. From 1995 to 1996, he was a visiting scholar at RWTH-Aachen University in Germany for collaborative research. Since April 2004, he has been teaching and researching at the School of Microelectronics and Solid-State Electronics of Chengdu University of Electronic Science and Technology. Mainly engaged in the preparation of electronic functional thin film materials and the correlation between structure and performance. He has published more than 130 articles in important journals at home and abroad, including 99 SCI articles and won nine Chinese invention patents. Invited or spoken at international and domestic academic conferences more than 20 times.

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	QIU Yu
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Cite this article:

QIU Yu,ZHU Jun,ZHOU Yunxia, et al. Effect of Al Doping Concentration on Ferroelectric Properties of Hf_0.5Zr_0.5O₂ Thin Films[J]. Materials Reports, 2021, 35(2): 2001-2005.

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http://www.mater-rep.com/EN/10.11896/cldb.20020160 OR http://www.mater-rep.com/EN/Y2021/V35/I2/2001

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