铁电膜层制备技术研究现状

doi:10.11896/cldb.19100184

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Abstract Ferroelectric thin films with the thickness of tens of nanometers to several microns have good piezoelectric, dielectric and pyroelectric properties, which have wide application prospects in the fields of microelectronics, photoelectronics and microelectromechanical systems. With the development of the preparation technology of ferroelectric thin films, the combination of modern microelectronic technology and various functions of ferroelectric thin films will develop many new functional devices and promote the development of emerging technologies. Therefore, the research on ferroelectric thin films has become a very active field in the research of new materials at home and abroad. Ferroelectric memory is particularly attractive in many applications of ferroelectric thin films.
How to prepare the ferroelectric thin films with good properties and meet the requirements of integrated ferroelectric parts has become the key link restricting the application of ferroelectric thin films. The progress of thin film preparation technology can improve the quality of ferroelectric thin films. At present, people have been able to use various methods to prepare excellent ferroelectric thin films. In general, the preparation of ferroelectric thin films can be divided into chemical deposition and physical deposition according to their film-making mechanism. Micronanometer ferroelectric thin films are prepared by chemical deposition. The properties of ferroelectric thin films are improved by studying the composition, doping and orientation of thin films. Physical deposition is generally carried out under a high vacuum degree. By adopting different substrates and adjusting the temperature of substrates, films with different orientations, even epitaxial films, can be prepared. This method is particularly important for the preparation of films with high anisotropy of spontaneous polarization. The properties of ferroelectric coatings can be improved from the aspects of element doping, heat treatment and process parameter optimization. The progress of ferroelectric thin film preparation technology can improve the quality of thin film, and the improvement of film quality can promote the progress of functional device preparation technology and the improvement of performance, so that it is widely used.
In this paper, the recent advances in the preparation and application of ferroelectric thin films are reviewed, and the physico-chemical mechanism, advantages and disadvantages and application of ferroelectric thin films are discussed in view of the technical difficulties in the preparation of ferroelectric thin films by chemical, physical and thermal spraying methods.

Key words： ferroelectric thin films piezoelectric properties ferroelectric properties dielectric properties

Published: 19 January 2021

CLC number:

TB381

Fund:This work was financially supported by the National Natural Science Foundation of China (51775554, 51535011),the National Basic Research Program of China(973 Program) (61328304).

About author:: Hongling Qin joined the China Three Gorges University and worked as a teacher in 2004. Now she is a Professor and doctoral supervisor on tribology. She received her Ph.D. in Wuhan University of Technology on Dec. 2012.Her research interests include tribology and surface engineering,vibration and noise control.
Zhiguo Xing, Ph.D., assistant professor, research direction for the surface tribology.
Haidou Wang received his Ph.D. degree in Department of Mechanical Engineering from Tsinghua University in 2003. He joined the National Key Laboratory for Remanufacturing at Academy of Armored Forces from then on. He is a professor, Ph.D. supervisor and the deputy director of the laboratory. He is the National Outstan-ding Youth Science Fund Winner and Chief Scientist of National Defense 973 Program. His current research areas cover the surface engineering, remanufacturing and tribology.

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	QIN Hongling
	ZHU Hefa
	XING Zhiguo
	WANG Haidou
	GUO Weiling
	HUANG Yanfei

Cite this article:

QIN Hongling,ZHU Hefa,XING Zhiguo, et al. Research Status of Ferroelectric Film Preparation Technology[J]. Materials Reports, 2021, 35(1): 1112-1120.

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http://www.mater-rep.com/EN/10.11896/cldb.19100184 OR http://www.mater-rep.com/EN/Y2021/V35/I1/1112

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