相变存储材料的研究现状及未来发展趋势

doi:10.11896/cldb.19080028

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Abstract As a new type of storage technology, phase change storage technology exhibits the advantages of non-volatility, fast read and write speed, long service life, and good compatibility with existing semiconductor technologies. Since entering people's field of vision, it has attracted many researchers. In particular, it has developed rapidly in the past decade. Scholars are also constantly exploring the phase change principle of phase change memory materials. The existing ones such as umbrella jump theory, multi-ring theory, and resonance bond theory can explain the phase change mechanism of phase change memory materials from a certain angle. In addition, the researchers have also established a theoretical model, which will greatly benefit the development of new phase change memory materials.
For phase change memory materials, there are disadvantages such as slow crystallization speed, low crystallization temperature, poor thermal stability, and high operating voltage. Currently, the commonly used modification method is to dope non-metal elements or metal elements on the basis of raw materials to make the crystallization speed, resistivity, thermal stability, grain size, operating voltage, and service life have been optimized. For example, the Ti-Sb-Te and Sc-Sb-Te new phase change memory materials developed in recent years have improved performance in many aspects such as crystallization temperature, crystallization speed, and thermal stability, and are expected to be candidate materials for phase change memory. At present, the preparation methods of phase change memory materials mainly include magnetron sputtering, which has fast deposition speedand high purity of the film produced. However, scholars have not yet reached a unified conclusion on the phase change mechanism of phase change memory materials. The performance of phase change memory materials is poor and cannot meet the requirements of industrialization, thus in-depth research is still needed.
This article focuses on the development of phase change memory materials, reviews the phase change mechanism, doping modification, pre-paration methods, characterization methods and industrialization progress of phase change memory materials, and deeply analyzes the phase change mechanism of phase change memory materials and doping mechanism. In the future, the research mode of phase change memory materials will be transformed into a design, development, and optimization method, which will further shorten the research cycle of phase change memory materials.

Key words： phase change memory phase change memory material phase change mechanism doping

Published: 17 November 2020

CLC number:

TB34

Fund:This work was financially supported by the Yunnan Innovation Team Project (2019HC024), Kunming Rare Precious Metal Sputtering Target Technology Innovation Team (13020169), The 18th Batch of Technical Innovation Talents of Yunnan Province (13020176).

About author:: Zhihao Song graduated from China University of Mi-ning and Technology (Beijing) in June 2018 with a bachelor's degree in engineering. He is currently a gra-duate student of the Kunming Institute of Precious Me-tals and is conducting research under the guidance of Teacher Zhilong Tan. At present, the main research field is phase change memory materials.
Zhilong Tan is a senior engineer and postgraduate tutor at the Kunming Institute of Precious Metals. In July 2007, he graduated from the School of Materials of Nanchang Aviation University. In July 2010, he obtained a master's degree in materials science from the Kunming Institute of Precious Metals. After graduation, he stayed at the Institute. In 2018, he was selected as the 18th batch of technical innovation talents in Yunnan Pro-vince. He mainly engaged in the research work of rare metal functional materials. In recent years, he has published more than 20 academic papers in the field of rare metal alloy materials and has been granted 8 invention patents.

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	SONG Zhihao
	ZHANG Kunhua
	WEN Ming
	GUO Junmei
	CHEN Jialin
	TAN Zhilong

Cite this article:

SONG Zhihao,ZHANG Kunhua,WEN Ming, et al. Research Status and Future Development Trend of Phase Change Memory Materials[J]. Materials Reports, 2020, 34(21): 21099-21104.

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http://www.mater-rep.com/EN/10.11896/cldb.19080028 OR http://www.mater-rep.com/EN/Y2020/V34/I21/21099

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