MATERIALS AND SUSTAINABLE DEVELOPMENT: ADVANCED MATERIALS FOR CLEAN ENERGY UTILIZATION |
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Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface |
YUAN Qi1, CHA Limei1, MING Wenquan1, YANG Xiubo1, LI Shiyong1, HAN Junfeng2
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1 College of Materials Science and Engineering, Hunan University, Changsha 410082; 2 Department of Physics,Beijing Institute of Technology,Beijing 100081 |
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Abstract CuInxGa1-xSe2 (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃. A MoSe2 thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃. The MoSe2 layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe2/Mo. In addition, the orientations of MoSe2 grains may effect on the formation of second phases.
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Published: 20 July 2018
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