硒化温度对CIGS/Mo界面微观结构和化学成分的影响

doi:10.11896/j.issn.1005-023X.2018.11.003

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Abstract CuIn_xGa_1-xSe₂ (CIGS) films were deposited on soda-lime glass by magnetron sputtering and selenization heat treatments. X-ray diffraction (XRD), high resolution transmission microscopy (HR-TEM), high-angle annular dark field (HAADF) image and X-ray energy dispersive spectrum (EDS) mapping were utilized to analyze the influence of selenization temperature on the characters of CIGS/Mo interface. It was found that CIGS/Mo interface was clear when the selenization temperature was 400 ℃. A MoSe₂ thin layer and Na-riched second phase nanoparticles were detected at CIGS/Mo interface at 500 ℃. The MoSe₂ layer became thicker and the Na-riched nanoparticles grew into a curved band at 600 ℃, therefore the CIGS/Mo interface developed into a multilayered structure of CIGS/Na-riched second phase/MoSe₂/Mo. In addition, the orientations of MoSe₂ grains may effect on the formation of second phases.

Key words： CuIn_xGa_1-xSe₂ film interface microstructure composition

Published: 20 July 2018

CLC number:	TB321
	TM615

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	Articles by authors
	YUAN Qi
	CHA Limei
	MING Wenquan
	YANG Xiubo
	LI Shiyong
	HAN Junfeng

Cite this article:

YUAN Qi,CHA Limei,MING Wenquan, et al. Influences of the Selenization Temperature on the Microstructures and Chemical Compositions of CIGS/Mo Interface[J]. Materials Reports, 2018, 32(11): 1787-1790.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.11.003 OR http://www.mater-rep.com/EN/Y2018/V32/I11/1787

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