INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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Research Progress on Epitaxy Growth and Application of Gallium Oxide Thin Films |
JIANG Qian1,2, ZHANG Jing1,*, XIE Liang1, MENG Junhua3, ZHANG Xingwang2,4,*
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1 School of Information Science and Technology, North China University of Technology, Beijing 100144, China 2 Key Lab oratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 Faculty of Science, Beijing University of Technology, Beijing 100124, China 4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Monoclinic gallium oxide (β-Ga2O3) is an emerging wide bandgap semiconductor with an ultrawide bandgap (~4.9 eV) at room temperature, an high breakdown field strength (~8 MV/cm), a Baliga's figure of merit (BFOM) of 3 400, and availability of native single crystal substrates using inexpensive melt-based growth methods. These attractive properties of β-Ga2O3 make it an ideal candidate for potential applications such as high-power electronic devices and solar blind ultraviolet (UV) photodetectors. It is well known that the high quality epitaxial layer is the prerequisite for the fabrication of high performance devices. Up to now, the β-Ga2O3 epitaxial layers have been prepared by various methods, and several kinds of devices have been fabricated. However, many challenges still exist, including heteroepitaxial growth maturity, p-type doping, and device performance optimization. This article reviews the current status of the synthesis technologies, the substrates for homoepitaxy/heteroepitaxy, doping, electrical properties and the applications of power devices and ultraviolet photodetectors.
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Published: 10 July 2022
Online: 2022-07-12
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Fund:Science and Technology Program of Beijing (Z191100004619004), and the National Natural Science Foundation of China (61874106). |
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