Materials Reports  2021, Vol. 35 Issue (z2): 110-114 |
| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| A Study on the Deep Etching Technology for WLP Package |
| NI Ye, XU Hao, MENG Tengfei, YUAN Yan, WANG Jun, ZHANG Yutao
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| Beijing Institute of Radio Measurement, Beijing 100854, China |
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Abstract This paperis focuses on the key technology of the silicon-based WLP (Wafer Level Package)——The deep hole etching technology. Through the selection of masking layer materials and the study of graphic process, the masking layer which meets the requirements of the deep hole etching process is prepared. The deep hole etching and process parameters are optimized by etching equipment, and the process parameters are : the etch depth is 185 μm, the aspect ratio is 9∶1, the profile is 90.08°, the scallop size is less than 64 nm, and the selectivity to PR is 46∶1. The deep hole etching technology can be applied to the TSV (Through Silicon Via) interconnection technology of wafer level packaging technology of FBAR (Film Bulk Acoustic Resonator).
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Published: 09 December 2021
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| About author:: Ye Ni received her B.E. degree in biomedical enginee-ring and M.D. degree in electronic science and techno-logy from the University of Electronic Science and Technology of China (UESTC) in Sep. 2004—Jun. 2011. She is a process engineer from Beijing Hangtian Weidian Technology Co., Ltd. Her research interests focus on the SAW and FBAR filters, and the study of the package & chip process. |
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1 米佳, 李辉. 压电与声光, 2012, 34(1), 4.
2 封国强, 蔡坚, 王水弟. 电子与封装, 2006, 6(11), 15.
3 王宇哲, 汪学方,徐明海, 等. 微纳电子技术, 2012, 49(1), 62.
4 闫智瑞. 电子工业专用设备, 2004, 116, 23.
5 蒋玉荣. 硅基MEMS三维结构湿法腐蚀技术研究. 硕士学位论文, 武汉理工大学, 2007.
6 崔进炜. 半导体技术, 2000, 25(4), 15.
7 张晓玉, 姚汉民, 杜春雷, 等. 微细加工技术, 2003(4), 22.
8 王爱博. MEMS晶圆级封装工艺研究. 硕士学位论文, 天津大学, 2012. |
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