基于原子层沉积技术制备氧化钽薄膜及其特性研究

doi:10.11896/cldb.19120213

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Abstract In this paper, the preparation and properties of tantalum oxide thin films by atomic layer deposition technology were studied using single crystal silicon as substrate, tantalum ethoxide and deionized water as tantalum and oxygen source, respectively. The effects of tantalum ethoxide source bottle temperature, substrate temperature and tantalum ethoxide pulse time on the growth rate, roughness and surface morphology of the obtained tantalum oxide thin films were investigated. The results of ellipsometry, atomic force microscopy, scanning electron microscopy and high resolution X-ray photoelectron spectroscopy show that, when tantalum ethoxide was using as the tantalum source, the surface of obtained tantalum oxide thin film are smooth and the roughness is less than 1 nm. The film growth rate is greatly depended on the process conditions. The best overall performance of tantalum oxide thin film was prepared at tantalum ethoxide source temperature, the pulse time and the substrate temperature of 170 ℃, 0.1 s and 200 ℃, respectively. In this condition, the film growth rate is 0.253 Å/cycle. The investigation of the preparation process of high performance tantalum oxide thin film by atomic layer deposition technique based on tantalum ethoxide would lay a foundation for the application in the field of dielectric material, storage medium and optical coating.

Key words： atomic layer deposition tantalum oxide thin film tantalum ethoxide growth rate roughness

Published: 23 March 2021

CLC number:

TB321

Fund:National Key R&D Program of China (2018YFF0109100), the Young Scientists Fund of the National Natural Science Foundation of China (61604175), the National Natural Science Foundation of China (61427901).

About author:: Shuaiqiang Ming received his M.S. degree in July 2018 from Wenzhou University. Studying for a Ph.D. at the Institute of Microelectronics, Chinese Academy of Sciences from September 2018 to July 2021, focusing on the research of two-dimensional materials and microelectronic components.
Weier Lu received her Ph.D. degree in materials from Institute of Physics and Chemistry (CAS) in 2012. She is currently an associate professor in Institute of Microelectrics (CAS) and participates in the development of film deposition equipment and technology. Her research interests are preparation of nanofilms, two-dimensional materials and devices.

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	MING Shuaiqiang
	WEN Qingtao
	GAO Yazeng
	YAN Meiju
	LU Weier
	XIA Yang

Cite this article:

MING Shuaiqiang,WEN Qingtao,GAO Yazeng, et al. Preparation of Tantalum Oxide Thin Films by Atomic Layer Deposition Technique and Their Property Characterization[J]. Materials Reports, 2021, 35(6): 6042-6047.

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http://www.mater-rep.com/EN/10.11896/cldb.19120213 OR http://www.mater-rep.com/EN/Y2021/V35/I6/6042

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