以g-C3N4为原料快速合成Ti2Al(C,N)陶瓷及其层状生长机制研究

doi:10.11896/cldb.19010042

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Abstract Ti₂Al(C,N) was prepared from Ti, Al and g-C₃N₄ powders by fast, low-energy self-propagating high temperature synthesis. When the molar ratio of Ti, Al and g-C₃N₄ is 2∶1.05∶1, the content of Ti₂Al(C,N) is the highest. In the reaction, the melting of Al promotes the formation of Ti(C,N)(s) from Ti(s) and g-C₃N₄(s), Ti(s) and Al(l) form TiAl(s) at the cooling stage, followed by Ti(C,N)(s) and TiAl(s) are subjected to reaction to form a layered Ti₂Al(C,N)(s). The study of the layered growth of Ti₂Al(C,N) grains shows that Ti₂Al(C,N) is a two-dimensional growth mechanism and grows in a step-like growth mode; the Ti₂Al(C,N) large grain layers has an inward lateral spreading mode; the presence of small impurity particles hinders the lateral spreading of the Ti₂Al(C,N) layer.

Key words： Ti₂Al(C,N) self-propagating high temperature synthesis layered growth mechanism

Published: 15 January 2020

CLC number:

TG148

About author:: Xiaoxuan Li, male, born in 1993, master student, mainly engaged in the preparation of ceramic matrix composites;Chuncheng Zhu, male, born in 1964, professor, master tutor, research direction is ceramic-based composite materials, presided over 2 projects of the Natio-nal Natural Science Foundation of China, presided over a number of provincial-level scientific research projects, and obtained more than 10 national authorizations. He has won the second prize of Heilongjiang Science and Technology and published more than 50 research papers.

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	LI Xiaoxuan
	ZHANG Qiang
	ZHU Chuncheng

Cite this article:

LI Xiaoxuan,ZHANG Qiang,ZHU Chuncheng. Rapid Synthesis and Layered Growth Mechanism of Ti₂Al(C,N) Using g-C₃N₄ as Raw Material[J]. Materials Reports, 2020, 34(4): 4032-4036.

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http://www.mater-rep.com/EN/10.11896/cldb.19010042 OR http://www.mater-rep.com/EN/Y2020/V34/I4/4032

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