磷酸二氢钾晶体薄表面层生长动力学实时显微研究

doi:10.11896/j.issn.1005-023X.2018.18.004

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Abstract The growth processes of the thin {010} and {101} layers of potassium dihydrogen phosphate (KDP) crystals were observed in real time by optical microscopy. The displacement velocities of the abnormal crystallographic edges with different inclination angles on the growth front of the thin surface layers were measured under different supersaturations. Results showed that the smaller the inclination angle was, the slower the displacement velocity of the abnormal crystallographic edge was. The growth process of the thin surface layer terminated at normal crystallographic edges on the growth front. With increase of supersaturation, the displacement velocity of the abnormal crystallographic edge increased linearly. In addition, the kinetic coefficients for abnormal crystallographic edges on the thin {010} and {101} layers were calculated. Compared with the thin {101} layers, the thin {010} layers had a larger kinetic coefficient because of the bigger slice energy Eslice(010). A volume diffusion model based on the motion of a parallel sequence of elementary steps on the growth front of thin surface layer was established. This model was not only used to explain the change of the advanced velocities of thin surface layer with its thickness and the inclination angle of its abnormal crystallographic edge on the growth front, but also applied to discuss the effect of the flow on the growth of thin surface layers. At last, a critical thickness under which the thin surface layer would go forward with a constant thickness was found.

Key words： thin surface layer growth kinetics optical microscopy potassium dihydrogen phosphate (KDP) crystal bulk diffusion

Published: 18 October 2018

CLC number:

O78

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	Articles by authors
	HU Zhitao
	LI Mingwei
	YIN Huawei
	LIU Hang

Cite this article:

HU Zhitao,LI Mingwei,YIN Huawei, et al. In Situ Micro-study on the Growth Kinetics of the Thin Surface Layer of Potassium Dihydrogen Phosphate Crystal[J]. Materials Reports, 2018, 32(18): 3116-3122.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.18.004 OR http://www.mater-rep.com/EN/Y2018/V32/I18/3116

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