| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Formation of Microstrain-induced Anisotropic Silicon Nanostructure andIts Optical Property |
| CHANG Gengrong1, LIU Mingxia1, MA Fei2, XU Kewei1,2
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1 Provincial Key Laboratory for Surface Engineering and Remanufacturing, Xi’an University, Xi’an 710065;
2 State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049 |
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Abstract Anisotropic silicon nanocrystals (Si Ncs) in amorphous Si1-x-yGexCy thin films were obtained by magnetron sputtering deposition and post-annealing process at high temperature. The microstructure and optical properties of anisotropic Si Ncs were analysed by high-resolution transmission electron microscopy, photoluminescence (PL) and UV-visible absorption. The morphology and optical properties were studied in this article, and the formation mechanism stated. The results showed that Si QDs preferentially grow along the directions with the lower strain energy, such as, 〈002〉, 〈113〉 and 〈220〉, forming polymorphic structures. The polymorphic characteristics affected the energy level configuration as indicated by a blue shift. There were two PL spectrums at 2.57 eV and 2.64 eV. UV-visible absorption measurements revealed an enhanced absorption in the energy range of 2.57 eV, 1.89 eV, 1.2 eV and 0.96 eV, which can be adjusted by changing RS/G. That was expected to improve the amount of light quantum yield of photovoltaic cell.
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Published: 18 October 2018
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2018, Vol. 32 
