铋掺杂对SrTiO<sub>3</sub>薄膜微观结构及阻变行为的影响

doi:10.11896/j.issn.1005-023X.2018.11.023

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Abstract A series of bismuth-ion-doped SrTiO₃ thin films were deposited on p⁺-Si substrates via a sol-gel process and the subsequent rapid annealing technique, to fabricate the sandwich structures of Ag/Sr_1-xBi_xTiO₃/p⁺-Si for resistance-switching device. The effects of Bi-ion doping concentration on microstructure of the thin film, and resistance switching behavior of Ag/Sr_1-x-Bi_xTiO₃/p⁺-Si devices were investigated. The results showed that a low amount of Bi causes no change in the phase structure of Sr_1-xBi_xTiO₃ thin films, but an obvious increment of grain size can be observed with the increasing Bi doping content. The Bi₄SrTi₄O₁₅ and TiO₂ phases will form when the doping amount is x=0.16. All of the Ag/Sr_1-xBi_xTiO₃/p⁺-Si devices exhibit bipolar resistive and multi-level resistance switching behaviors. The increasing Bi doping concentration also leads to a biphasic (increase→decrease) change in the device’s resistance switching property;when x=0.12 the device shows the maximum high/low resistance ratio of 10⁵ and better reading endurance after 2 000 cycles, but the device performance decays while x=0.16. This can be explained by the change of dominant conduction mechanism under HRS (high resistance state) induced by Bi doping, from space charge limited current (SCLC) (x＜0.16) to Schottky barrier emission (x=0.16). All the devices conduct current in accordance with the filamentary theory under LRS (low resistance state).

Key words： sol-gel strontium titanate film Ag/Sr_1-xBi_xTiO₃/p⁺-Si bismuth doping resistance switching characteristic resistance-switching random access memory (RRAM)

Published: 20 July 2018

CLC number:

TM242

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	Articles by authors
	ZHANG Wenbo
	WANG Hua
	XU Jiwen
	LIU Guobao
	XIE Hang
	YANG Ling

Cite this article:

ZHANG Wenbo,WANG Hua,XU Jiwen, et al. Effects of Bismuth Doping Concentration on Microstructure and Resistance Switching Behavior of SrTiO₃ Films[J]. Materials Reports, 2018, 32(11): 1932-1937.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.11.023 OR http://www.mater-rep.com/EN/Y2018/V32/I11/1932

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