磁控溅射制备镁镓共掺氧化锌透明半导体薄膜及其性能研究

doi:10.11896/j.issn.1005-023X.2018.11.024

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Abstract Magnesium and gallium co-doped zinc oxide (MGZO) thin films were deposited onto quartz glass substrates by magnetron sputtering technique using a sintered ceramic target of MgO∶Ga₂O₃∶ZnO (2wt%∶2wt%∶96wt%). The effects of sputtering pressure on structural, electrical and optical properties of the deposited films were investigated by XRD, SEM, spectrophotometer and Hall effect measurement system. The results showed that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) orientation. The sputtering pressure significantly affects the microstructure and optoelectronic characteristics, but hardly the optical bandgaps of the deposited films. The most favorable optoelectronic performance was observed in the MGZO thin film deposited at the sputtering pressure of 3.5 Pa, as it possesses the best crystal quality, the minimum tensile stress (8.29×10^-2 GPa), the lowest electrical resistivity (1.62×10^-3 Ω·cm), the highest average visible transmittance (87.8%) and the maximum figure of merit (4.76×10³ Ω^-1·cm^-1). In addition, the optical bandgaps of the produced thin films were evaluated by extrapolation method and determined to be in the range of 3.41—3.44 eV which are hardly affected by the sputtering pressure.

Key words： zinc oxide transparent semiconductor film doping magnetron sputtering optoelectronic performance

Published: 20 July 2018

CLC number:

TN304

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	Articles by authors
	KANG Huai
	LU Zhou
	ZHONG Zhiyou
	LONG Hao

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KANG Huai,LU Zhou,ZHONG Zhiyou, et al. Magnetron Sputtering Deposition of Magnesium-Gallium Co-doped Transparent Zinc Oxide Semiconductor Thin Films and Their Properties[J]. Materials Reports, 2018, 32(11): 1938-1942.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.11.024 OR http://www.mater-rep.com/EN/Y2018/V32/I11/1938

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