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| Crystallization Kinetics of Selenium Nanocrystalline Film on Silicon (100) Substrate Produced by Rapid Thermal-annealing |
| PAN Shuwan1, ZHUANG Qiongyun2, CHEN Songyan3, HUANG Wei3, LI Cheng3, ZHENG Lixin1
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1 College of Engineering, Huaqiao University, Quanzhou 362021;
2 College of Information and Electronic Engineering, Liming Vocational University, Quanzhou 362000;
3 Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005 |
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Abstract The selenium (Se) amorphous films were fabricated on Si(100) substrates via an ultrahigh vacuum chemical vapor deposition technique, and were subsequently treated by a rapid thermal-annealing process under different temperatures to prepare a series of nanocrystalline films. We observed a surface morphology transformation from the streak-like crack to the structure of hexagonal blocks via SEM when the annealing temperature was higher than 140 ℃. XRD and Raman spectroscopy indicated that all the thermal-annealed Se nanocrystalline films consist of trigonal crystallites, and the Se nanocrystallites begin to preferentially crystallize along (100) orientation on the Si(100) substrate as the annealing temperature exceeds 140 ℃. The oriented crystallization of Se cry can be attributed to the lower activation energy along the (100) orientation compared to the (101) orientation, which causes a relatively greater crystallization rate along the (100) orientation. We ascribed this to an inducing effect of Si(100) substrate, which endows the crystallization of amorphous Se with anisotropy.
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Published: 20 July 2018
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2018, Vol. 32 
