石墨烯/n-Si肖特基结太阳能电池的性能限制因素及效率提升方法<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.03.020

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Abstract Graphene is a new type zero band gap and semi-metal material. Due to its high transmittance, good electrical conductivity, high stability, mechanical properties and other excellent performance, it could replace the traditional ITO material to prepare the new generation of graphene/n-Si Schottky junction solar cells. In this review the research progress of graphene/n-Si Schottky junction solar cells are described in detail, the reasons for affecting the performance of graphene/n-Si Schottky junction solar cells and the related optimization methods are mainly summarized and analyzed, in order to provide references for the further research and application of graphene/n-Si Schottky junction solar cells in the future.

Key words： graphene Schottky junction silicon solar cells

Published: 02 May 2018

CLC number:

TM914.4

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	Articles by authors
	SHANG Yudong
	CHEN Xiuhua
	LI Shaoyuan
	MA Wenhui
	WANG Yuechun
	XIANG Fuwei

Cite this article:

SHANG Yudong,CHEN Xiuhua,LI Shaoyuan, et al. Performance Limiting Factors and Efficiency Improvement Methods of Graphene/n-Si Schottky Junction Solar Cell[J]. Materials Reports, 2017, 31(3): 123-129.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.03.020 OR http://www.mater-rep.com/EN/Y2017/V31/I3/123

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