类金字塔状GaN微米结构的生长及其形貌表征

doi:10.11896/j.issn.1005-023X.2017.022.005

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Abstract The GaN micro-pyramid was grown on unintentional doped GaN epitaxial layers with in-situ pre-deposited SiNx mask via metal organic chemical vapor deposition (MOCVD).The effects of growth temperature, growth time, reaction pressure and Ⅴ/Ⅲ ratio on morphology of the GaN micro-pyramids were studied systematically. The results showed that the GaN micro-pyramid structures were formed at 1 075 ℃. As the growth time was prolonged from 3 min to 20 min, the basal diameter of the GaN micro-pyramids increased from 3.6 μm to 19.8 μm, while the density decreased from 3.8×103 cm-2 to 0.8×103 cm-2. The final complete pyramid-like or truncated pyramid-like GaN micro-structures was mainly determined by reaction pressure and Ⅴ/Ⅲ ratio. These results pave the way for the controllable in-situ growth of GaN micro/nano structures and may facilitate the further development of three-dimensional GaN-based LED devices.

Key words： GaN micro-pyramid metal organic chemical vapor deposition in-situ deposited SiNx mask three-dimensional GaN-based LED device

Published: 08 May 2018

CLC number:

O782+.9

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	Articles by authors
	ZHAO Chen
	JIA Wei
	FAN Teng
	TONG Guangyun
	LI Tianbao
	ZHAI Guangmei
	MA Shufang
	XU Bingshe

Cite this article:

ZHAO Chen,JIA Wei,FAN Teng, et al. The Growth and Morphology Characterization of GaN Micro pyramid Structure[J]. Materials Reports, 2017, 31(22): 21-25.

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http://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.022.005 OR http://www.mater-rep.com/EN/Y2017/V31/I22/21

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