| FERROELECTRIC AND FERROMAGNETIC MATERIALS |
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| Structural and Physical Properties of Bi0.975La0.025Fe0.975Ni0.025O3 Thin Film Prepared by Sol-gel Method |
| DAI Xiuhong1,2, ZHAO Hongdong1, ZHANG Yusheng2, GE Dayong2, SONG Jianmin2, LIU Baoting2
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1 School of Electronic and Information Engineering, Hebei University of Technology,Tianjin 300401;
2 College of Physics Science & Technology, Hebei University, Baoding 071002; |
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Abstract Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) ferroelectric film was fabricated on Pt/Ti/SiO2/Si (111) substrate by a sol-gel process. X-ray diffraction system (XRD), atomic force microscope (AFM), piezoresponse force microscopy (PFM) were used to characterize the crystal structure, morphology, and ferroelectric domain information. It was found that the well-crystallized perovskite BLFNO film is polycrystalline with grains almost uniformly distributed. Very obvious domain structures could be observed from the PFM image, indicating different orientaions of the grains related to ferroelectric domains. Moreover, it was found that Pt/BLFNO/Pt ferroelectric capacitor possesses very good ferroelectric properties, as the remnant polariztion is 74.3 μC/cm2 under 828 kV/cm electric field, which demonstrated that the La and Ni co-doping does not obviously decrease the remnant polarization of the capacitor. Compared to the pure BFO film, La and Ni co-doping can lower the leakage current density of Pt/BLFNO/Pt capacitor to the magnitude of 10-4 A/cm2 under 277.8 kV/cm electric field. The magnetic hysteresis loops of the BLFNO film measured at room temperature confirmed the antiferromagnetic property of Bi0.975La0.025Fe0.975Ni0.025O3 film.
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Published: 04 May 2018
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2017, Vol. 31 
