| REVIEW PAPER |
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| Research Progress of Partial Substitution of Cation in Cu2ZnSnS4 |
| GAN Guoyou1,2, ZOU Pinghan1,2, SHEN Tao1,2, SUN Shuhong1,2, ZHU Yan1,2
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1 Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093;
2 Key Laboratory of Advanced Materials of Yunnan Province, Kunming 650093; |
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Abstract Cu2ZnSnS4 (CZTS), a p-type semiconductor, is one of the most promising candidates for application in low-cost solar cells, owing to its optimal direct band gap (ca. ～1.0-1.5 eV), high absorption coefficient (over 104 cm-1) in the visible wavelength region, as well as its composition of naturally abundant and nontoxic elements. However, the intrinsic limitations of CZTS, such as secondary phases, antisite defects, carrier lifetime,etc, hinder the improvement of the efficiency of CZTS thin-film solar cell. In order to enhance the efficiency of CZTS thin-film solar cell, researchers have used partial substitution of Cu, Zn or Sn by other ca-tions to improve the defects of CZTS. In this paper, the progress of partially substituted CZTS in recent years is reviewed from three different substitution sites for CZTS. At the same time, the development prospect of partially substituted CZTS is discussed.
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Published: 04 May 2018
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2017, Vol. 31 
