| INORGANIC MATERIALS AND CERAMIC MATRIX COMPOSITES |
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| Dependence of the Melting Threshold of CdTe on the Wavelength and Pulse Lifetime of Laser Radiation |
| LEVYTSKYI Serhii1,*, CAO Zexiang2, KOBA Alexander3, KOBA Maria3
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1 V. E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, Kyiv 03028, Ukraine
2 Institute of Physics and Technology, National Technical University of Ukraine, Kyiv 03058, Ukraine
3 Faculty of State Security, Kyiv Institute of the National Guard of Ukraine, Kyiv 03028, Ukraine |
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Abstract CdTe has a reasonably large atomic number of elements, a reasonably large photoelectric absorption cross-section, a suitable band gap, and thus a sufficiently high resistance. These properties are all advantages that make CdTe the primary material for nuclear detectors, and the detector can be operated at room temperature (without cooling). The melting threshold Ith of CdTe is affected by the wavelength λ of the laser light, which ranges from 300 nm to 800 nm, and the pulse lifetime τp, which ranges from 7 ns to 120 ns. During melting, the energy released by excess carriers is divided into three parts: (i) after excitation, (ii)during non-radiative scattering, and (iii)during non-radiative surface recombination, which together determine the depth of thermal penetration in the crystal and thus the melting threshold of CdTe in the surface region. The CdTe melting threshold is known to depend on the absorption coefficient α(λ) over a laser pulse lifetime range of 7 ns to 1 μs. At pulse lifetime greater than 1 μs, it depends on the reflection coefficient of the spectrum R(λ). Variations in the non-equilibrium excess carrier parameters found in this paper (lifetime, diffusion depth, and surface recombination rate) can affect the CdTe melting threshold by at least 25%. Since a large amount of work in this area of research has focused on the design of CdTe-based instruments that can be used for the detection and measurement of X-rays/gamma rays as well as for imaging. In this work, therefore, provides guidances for the development of CdTe-based semiconductor laser doping processes and the production of their diode structures.
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Published: 10 April 2024
Online: 2024-04-11
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Corresponding Authors:
Levytskyi Serhii, received his Master’s and Ph.D. degrees from Kamianets-Podilskyi State University and the National Academy of Sciences of Ukraine in 2005 and 2016, respectively. He is currently employed at the Institute of Semiconductor Phy-sics of the National Academy of Sciences of Ukraine. His primary research focuses on developing semiconductor surface processing methods, particularly laser-assisted techniques, to modify the structural, photoelectric, and electrical properties of semiconductors such as CdTe-based, PbTe-based, and PbSe-based materials. Levytskyi Serhii has led or served as principal investigator on more than 20 R&D international projects. He has authored 78 articles in journals and proceedings, holds 6 patents, and has pre-sented over 147 abstracts and reports. Throughout his career, Serhii has received several honors, awards, scholarships, and fellowships, including scholarships from the Kyiv Mayor for Talented Youth in 2007, scholarships from the National Aca-demy of Sciences of Ukraine for Young Scientists from 2008 to 2010, and scholarships from the President of Ukraine for Young Scientists from 2010 to 2012. In 2014, he was recognized as ‘The best young scientist’ at the V.E. Lashkaryov Institute of Semiconductor Physics of the NAS of Ukraine. levytskyi@ua.fm
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2024, Vol. 38 
