元素掺杂对ITO薄膜材料性能影响的微观机制及研究进展

doi:10.11896/cldb.21010015

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Abstract Transparent conductive oxides (TCOs) are heavily-doped semiconductor materials, which are widely used in the fields like liquid crystal displays, touch screens and solar cells. They exhibit a high conductivity close to that of metal, because of a large number of free electrons produced by heavy doping and high degeneracy. Moreover, TCOs maintain larger band gap, which provides high visible light transmittance. As a kind of TCOs material, indium tin oxide (ITO) thin film has excellent photoelectric properties, such as wide band gap, high visible light transmission, high near-infrared reflection and low resistivity. Therefore, ITO thin film becomes the most widely used TCOs in the world, with a market share of 97%.
At present, ITO thin film still has some shortcomings to be solved, such as higher cost of Indium. Moreover, ITO show poor light transmittance in the near-infrared region and brittleness, which cannot meet the requirements of modern optoelectronic devices for flexibility. With the development of science and technology and the upgrading of various electronic components, ITO thin films can no longer meet the needs of applications nowadays. How to further improve the properties of ITO thin films has become a hot research topic.
Element doping can improve the overall performance of the ITO thin film. For example, free electrons will be generated by the inequivalent replacement of high-valent metal elements. The photoelectric properties of the thin film can be enhanced by optimizing carrier concentration, carrier mobility and scattering mechanism. The mechanical properties also can be modulated by introducing impurity elements, which inhibit surface migration, the crystallization and reduce internal stress of the thin film. In addition, element doping can promote the formation of passivation layer and stable chemical bonds to deal with harsh working conditions, such as high temperature, high pressure and strong corrosive environment.
This article summarizes the research progress of element-doped ITO thin films. The effects of element doping on photoelectric properties, mechanical properties and stability of ITO thin films are introduced, respectively. Moreover, this review discusses the existing problems in current research, and the development direction of element doping in ITO thin films.

Key words： ITO film doping optical and electrical properties mechanical property stability

Published: Online: 2022-12-09

CLC number:

TB383

Fund:National Key Research and Development Program of China(2018YFB2003102).

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	ZHANG Yiwen
	SONG Wanqing
	ZHANG Shiyu
	XIE Guijiu
	JI Huiming

Cite this article:

ZHANG Yiwen,SONG Wanqing,ZHANG Shiyu, et al. Microscopic Mechanism and Research Progress of the Effects of Element Doping on the Properties of ITO Thin-film Materials[J]. Materials Reports, 2022, 36(23): 21010015-9.

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http://www.mater-rep.com/EN/10.11896/cldb.21010015 OR http://www.mater-rep.com/EN/Y2022/V36/I23/21010015

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