不同衬底和Eu掺杂对MoS<sub>2</sub>薄膜结构和光电性能的影响

doi:10.11896/cldb.25030126

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Abstract This study investigates the influence of substrate choice and Eu³⁺ doping on the photoelectric properties of MoS₂ thin films. MoS₂ films were deposited on silicon (Si) and quartz substrates using a combined magnetron sputtering and chemical vapor deposition (CVD) method. The effects of Eu³⁺ doping on film surface morphology, crystal structure, electrical conductivity, and photoelectric characteristics were systematically investigated. Results demonstrate the successful synthesis of uniformly dense, Eu³⁺-doped multilayer molybdenum disulfide films on both substrates. Increasing europium content degraded the crystalline quality of the films. Compared to the MoS₂ films deposited on quartz substrates, the E¹_2g and A_1g vibrational modes of the films on Si substrates exhibited red shifts of 2.08 cm^-1 and 1.91 cm^-1, respectively. This indicates that the MoS₂ films grown on Si substrates experience greater tensile stress. A photodetector fabricated using the Eu-doped MoS₂ film on the Si substrate exhibited a rise time of 647 ms, a fall time of 351 ms, a responsivity (R) of 263.85 mA/W, an external quantum efficiency (EQE) of 6 149.92%, and a specific detectivity (D^*) of 7.7×10⁷ Jones. The utilization of the Si substrate and Eu³⁺ doping significantly enhanced the photoelectric performance of the MoS₂-based photodetector.

Key words： rare earth doping molybdenum disulfide (MoS₂) substrate photodetection

Received: 10 May 2026 Published: Online: 2026-05-18

CLC number:

O484.4

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	Articles by authors
	JI Qiqi
	QI Dongli
	ZHU Tingting
	KUANG Ye
	SHEN Longhai

Cite this article:

JI Qiqi,QI Dongli,ZHU Tingting, et al. Effects of Substrate and Europium Doping on the Structure and Optoelectronic Properties of MoS₂ Thin Films[J]. Materials Reports, 2026, 40(9): 25030126-6.

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https://www.mater-rep.com/EN/10.11896/cldb.25030126 OR https://www.mater-rep.com/EN/Y2026/V40/I9/25030126

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