Cu<sub>2</sub>Se热电忆阻器模拟计算与性能表征

doi:10.11896/cldb.22010058

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Abstract A memristor is a circuit element that can store information or perform calculations by changing its resistance. However, a pulse circuit with a pulse width of up to nanosecond is a difficult task, and limits the speed at which the memristor can change resistance. The pulse width of a pulsed laser is very short and can easily reach the nanosecond level. Cu₂Se is a typical thermoelectric material with both hole and Cu⁺ as carriers under the graded temperature field. The movement of Cu⁺ is irreversible without graded temperature field. Besides, the energy consumption for establishing thermal or graded temperature field (10 000 ℃=1 eV) is much less than that for electric field, laser, oxidation-reduction reactions, etc. Therefore Cu₂Se might be a kind of thermoelectric memristor material. In this work, the memristor electrical properties of Cu₂Se samples were measured, and the temperature distribution models of Cu₂Se samples at different times in the thickness direction were simulated. The thermoelectric potential and electric field intensity at different positions were calculated according to the thermoelectric property of Cu₂Se. As the result, the electric field intensities of Cu₂Se samples at different positions along the thickness direction after pulsed laser were obtained. The experimental results show that the direct voltage and inverse voltage of 70 μm thick Cu₂Se samples with 1 mm probe spacing are 0.47 V and 0.40 V, respectively, Cu₂Se thermoelectric materials do not need an initial high voltage to stimulate the memristor effect. Also, the mechanism of Cu₂Se ther-moelectric memristor has been proposed. The calculation results indicate that the electric field intensities (50—0.56 V/mm)along the thickness direction is greater than the electric field intensities required for resistance transformation (0.5 V/mm). Therefore, the feasibility of laser irradiation Cu₂Se thermoelectric memristor devices is proved theoretically.

Key words： thermoelectric material memristor copper(I) selenium memristor effect thermoelectric memristor

Published: Online: 2023-07-10

CLC number:

TN604

Fund:National Key Research and Development Program of China (2017YFF0204706), the Fundamental Research Funds for the Central Universities (FRF-MP-18-005, FRF-MP-19-005), and the Disruptive Innovation Funding Programs (19-163-13-ZT-001-008-19).

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	SHI Ran
	ZHANG Xiangyu
	NAN Bohang
	XU Guiying

Cite this article:

SHI Ran,ZHANG Xiangyu,NAN Bohang, et al. Simulation Calculation and Performance Analysis of Cu₂Se Thermoelectric Memristor[J]. Materials Reports, 2023, 37(13): 22010058-7.

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http://www.mater-rep.com/EN/10.11896/cldb.22010058 OR http://www.mater-rep.com/EN/Y2023/V37/I13/22010058

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