6H-SiC纳米磨削机理的分子动力学研究

doi:10.11896/cldb.24080001

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Abstract 6H-SiC, as a representative of advanced semiconductor materials, exhibits outstanding physical properties and chemical stability, playing a pivotal role in high-tech industries such as optoelectronics and aerospace. Its high hardness and low fracture toughness present a great challenge in ultra-precision machining. Consequently, this study employs molecular dynamics simulation to investigate the nano-grinding behavior of 6H-SiC under different abrasive shapes (spherical, truncated cone, quadrangular frustum pyramid) and analyzes the influence of grinding depth on nano-grinding characteristics comprehensively. The results indicated that quadrangular frustum pyramid abrasives demonstrate optimal material removal efficiency, albeit accompanied by the largest subsurface damage. Under deeper grinding conditions, the spherical abrasive particles exhibit a material removal rate that surpasses that of the truncated cone particles, and they induce less subsurface damage. Furthermore, as grin-ding depth increases, a transition of the material removal mechanism occurrs, accompanied by increased grinding force and temperature, while the impact of abrasive shape on grinding quality becomes more pronounced. These findings provide a theoretical foundation for optimizing processing parameters of hard brittle materials like 6H-SiC.

Key words： 6H-SiC molecular dynamics nano-grinding grinding depth grain shape subsurface damage

Published: 25 May 2025 Online: 2025-05-13

CLC number:

O77

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	Articles by authors
	GENG Ruiwen
	ZHOU Xingchen
	TIAN Zhuxin
	XIE Qiming
	LI Lijun
	WU Haihua
	SHUANG Jiajun
	YANG Zhijiang

Cite this article:

GENG Ruiwen,ZHOU Xingchen,TIAN Zhuxin, et al. Study on the Nano-grinding Mechanism of 6H-SiC Based on Molecular Dynamics[J]. Materials Reports, 2025, 39(10): 24080001-8.

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https://www.mater-rep.com/EN/10.11896/cldb.24080001 OR https://www.mater-rep.com/EN/Y2025/V39/I10/24080001

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