二硫化钼纳米片的制备及其光敏和气敏特性研究

doi:10.11896/j.issn.1005-023X.2018.06.002

Abstract
Figure/Table
References
Related Citation (15)

Download:

Full Text ( PDF ) (2183KB)
Export: BibTeX | EndNote (RIS)

Abstract High-purity MoS₂ nanosheets have been synthesized by thermal sulfuration method. The phase and morphology of the samples were characterized by X-ray diffraction, Raman spectrometer, scanning electron microscope and energy dispersive spectrometer. The effect of reaction temperature on the MoS₂ nanosheets was analyzed. The photo sensitive and gas sensitive properties of MoS₂ were studied. It was found that the nanosheets was more sensitive to the green light than the red light. High sensor response and fast response/recovery time to methanol, ethanol were observed in MoS₂ nanosheets based device, and its gas sensing mechanism was discussed.

Key words： molybdenum disulfide nanosheets photo sensitive gas sensitive

Published: 25 March 2018 Online: 2018-03-25

CLC number:

TQ125

	Service
	E-mail this article
	Add to my bookshelf
	Add to citation manager
	E-mail Alert
	RSS
	Articles by authors
	MA Hao
	YANG Ruixia
	LI Chunjing
	HAN Yingkuan

Cite this article:

MA Hao,YANG Ruixia,LI Chunjing, et al. Fabrication and Characteristics of MoS₂ Nanosheets on Photo-sensing and Gas-sensing[J]. Materials Reports, 2018, 32(6): 860-864.

URL:

https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.06.002 OR https://www.mater-rep.com/EN/Y2018/V32/I6/860

1 Miro P, Audiffred M, Heine T. An atlas of two-dimensional mate-rials[J].Chemical Society Reviews,2014,43(18):6537.
2 Mak K F, Lee C, Hone J, et al. Atomically thin MoS₂: A new direct-gap semiconductor[J].Physical Review Letters,2010,105(13):136800.
3 Kuc A, Zibouche N, Heine T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS₂[J].Physical Review B,2011,83(24):245208.
4 Radisavljevic B, Whitwick M B, Kis A. Small-signal amplifier based on single-layer MoS₂[J].Applied Physics Letters,2012,101(4):043103.
5 Wu D, Zhang Z, Lv D, et al. High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS₂[J].Materials Express,2016,6(2):198.
6 Saito Y, Nakamura Y, Bahramy M S, et al. Superconductivity protected by spin-valley locking in ion-gated MoS₂[J].Nature Physics,2016,12(2):144.
7 Pospischil A, Mueller T. Optoelectronic devices based on atomically thin transition metal dichalcogenides[J].Applied Sciences,2016,6(3):78.
8 Ye Y, Ye Z, Gharghi M, et al. Exciton-dominant electroluminescence from a diode of monolayer MoS₂[J].Applied Physics Letters,2014,104(19):193508.
9 Withers F, Del Pozo-Zamudio O, Mishchenko A, et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures[J].Nature Materials,2015,14(3):301.
10 Bernardi M, Palummo M, Grossman J C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials[J].Nano Letters,2013,13(8):3664.
11 Yin Z, Li H, Li H, et al. Single-layer MoS₂ phototransistors[J].American Chemical Society Nano,2011,6(1):74.
12 Long H, Harley Trochimczyk A, Pham T, et al. High surface area MoS₂/graphene hybrid aerogel for ultrasensitive NO₂ detection[J].Advanced Functional Materials,2016,3:1002.
13 Shokri A A, Salami N. Gas sensor based on MoS₂ monolayer[J].Sensors and Actuators B:Chemical,2016,236:378.
14 Cho B, Hahm M G, Choi M, et al. Charge-transfer-based gas sen-sing using atomic-layer MoS₂[J].Scientific Reports,2015,5:8052.
15 Liu B, Chen L, Liu G, et al. High-performance chemical sensing using schottky-contacted chemical vapor deposition grown monolayer MoS₂ transistors[J].American Chemical Society Nano,2014,8(5):5304.
16 Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS₂[J].Nature Nanotechnology,2013,8(7):497.
17 Shanmugam M, Durcan C A, Yu B. Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells[J].Nanoscale,2012,4(23):7399.
18 Li H, Yin Z, He Q, et al. Fabrication of single- and multilayer MoS₂ film-based field-effect transistors for sensing NO at room temperature[J].Small,2012,8(1):63.
19 Perea-López N, Lin Z, Pradhan N R, et al. CVD-grown monola-yered MoS₂ as an effective photosensor operating at low-voltage[J].2D Materials,2014,1(1):011004.
20 Cunningham P D, McCreary K M, Hanbicki A T, et al. Charge trapping and exciton dynamics in large-area CVD grown MoS₂[J].The Journal of Physical Chemistry C,2016,120(10):5819.
21 Toth P S, Velicky M, Bissett M A, et al. Asymmetric MoS₂/graphene/metal sandwiches: Preparation, characterization, and application[J].Advanced Materials,2016,28(37):8256.
22 Liu K K, Zhang W, Lee Y H, et al. Growth of large-area and highly crystalline MoS₂ thin layers on insulating substrates[J].Nano Letters,2012,12(3):1538.
23 Heyne M H, Chiappe D, Meersschaut J, et al. Multilayer MoS₂ growth by metal and metal oxide sulfurization[J].Journal of Mate-rials Chemistry C,2016,4(6):1295.
24 Wu Z, Wang D, Wang Y, et al. Preparation and tribological properties of MoS₂ nanosheets[J].Advanced Engineering Materials,2010,12(6):534.
25 牛德芳.半导体传感器原理及其应用[M].大连:大连理工大学出版社,1993:195.
26 Ghatak S, Pal A N, Ghosh A. Nature of electronic states in atomically thin MoS₂ field-effect transistors[J].American Chemical Society Nano,2011,5(10):7707.
27 Lee H S, Min S W, Chang Y G, et al. MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap[J].Nano Letters,2012,12(7):3695.
28 Xuan Tianmei,Yin Guilin,Ge Meiying,et al. Research progress on nano-ZnO gas sensors[J].Materials Review A:Review Papers,2015,29(1):132(in Chinese).
宣天美,尹桂林,葛美英,等.纳米ZnO气敏传感器研究进展[J].材料导报:综述篇,2015,29(1):132.