高效本征薄层异质结(HIT)太阳电池技术研究进展

doi:10.11896/j.issn.1005-023X.2018.05.001

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Abstract Heterojunction with intrinsic thin-layer (HIT) consist of thin amorphous silicon layers deposited on crystalline silicon wafers, which forms a silicon heterojunction (SHJ) structure with the major advantages of full exploitation of the excellent passivation properties of a-Si∶H films, and consequently, the energy conversion efficiencies higher than homogenous cells. The paper provides an introduction on the development and the structure of the HIT solar cells, and a discussion upon the wafer layers, the a-Si (undoped/doped) layers, the TCO (transparent conducting oxides) films and the metal grid electrodes from the perspectives of fabrication processes, the principle of passivation, and the band gap. Finally a prospect on the future trends are also proposed.

Key words： band gap passivation carrier mobility heterojunction with intrinsic thin-layer(HIT) solar cell

Published: 10 March 2018 Online: 2018-03-10

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TM914

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	Articles by authors
	HAO Licheng
	ZHANG Ming
	CHEN Wenchao
	FENG Xiaodong

Cite this article:

HAO Licheng,ZHANG Ming,CHEN Wenchao, et al. A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer (HIT) Solar Cells[J]. Materials Reports, 2018, 32(5): 689-695.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.05.001 OR https://www.mater-rep.com/EN/Y2018/V32/I5/689

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