氮化铟薄膜的p型掺杂和铁磁性研究进展*

doi:10.11896/j.issn.1005-023X.2017.07.008

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Abstract Ⅲ-nitride (InN, GaN and AlN) semiconductors have been widely used in the field of microwave and optoelectronic devices due to their unique band structure and properties. Among them, the researches and developments on InN-based materials and devices have been recognized as the key points to promote the modern optoelectronic technology. Moreover, extensive new fundamental studies have been focused on p-type conduction and room temperature ferromagnetism studies in InN. This paper first gives a brief introduction to the crystal structure and the growth methods of InN film, and analyze the challenges encountered in its development. Then we mainly concentrate on the recent development in InN research about p-type conduction and ferromagnetism. At the same time, the related researches studied in our group are presented. Finally, a short conclusion and expectation is given.

Key words： indium nitride p-type doping ferromagnetism film preparation

Published: 10 April 2017 Online: 2018-05-08

CLC number:

O472

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	Articles by authors
	LI Yunyi
	WANG Wei
	LIU Zhijun
	GONG Wei
	XIE Qiyun

Cite this article:

LI Yunyi,WANG Wei,LIU Zhijun, et al. Development of InN Film on p-Type Doping and Ferromagnetism[J]. Materials Reports, 2017, 31(7): 54-58.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.07.008 OR https://www.mater-rep.com/EN/Y2017/V31/I7/54

1 Strite S, Morkoc H. GaN, AlN, and InN: A review [J]. J Vacuum Sci Technol B,1992,10(4):1237.
2 Jain S C, Willander M, et al. Ⅲ-nitrides: Growth, characterization, and properties [J]. J Appl Phys,2000,879(3):965.
3 Foutz B E, OpLeary S K, Shur M S. Transient electron transport in wurtzite GaN, InN, and ALN [J]. J Appl Phys,1999,85(11):7727.
4 Bockowski M. High pressure direct synthesis of Ⅲ-Ⅴ nitrides [J]. Physical,1999,265(1):1.
5 Higashiwaki M, Matsui T. High-quality InN film grown on a low-temperature-grown GaN intermediate layer by plasma-assisted molecular-beam epitaxy [J]. Jpn J Appl Phys,2002, 41(5B):L540.
6 Aumer M E, LeBoeuf S F, Moody B F, et al. Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells [J]. Appl Phys Lett,2001,79(23):3803.
7 Musikhin Yu G, Gerthsen D, Bedarev D A, et al. Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures [J]. Appl Phys Lett,2002,80(12):2099.
8 Chichibu S, Azuhata T, Sota T, et al. Spontaneous emission of localized excitons in InGan single and multiquantum well structures [J]. Appl Phys Lett,1996,69(27):4188.
9 Mi Z T, Zhao S R. Extending group-Ⅲ nitrides to the infrared: Recent advances in InN [J]. Phys Status Solidi B,2015,252(5):1050.
10 Lu Zhenyu. Study on MBE grown and physical properties of molecular Ⅲ-Ⅴ semiconductor nanowires[D]. Shanghai: Shanghai Institute of Technical Physics, Chinese Academy of Sciences,2014.
卢振宇.Ⅲ-Ⅴ族半导体纳米线的分子束外延生长及物理性质的研究[D].上海:中国科学院上海技术物理研究所,2014.
11 Zhai Luqing. Study on the preparation and technology of InN[D]. Jinan: Shandong University, 2012.
翟露青. InN的制备及其技术研究[D]. 济南:山东大学,2012.
12 Blant A V, Cheng T S, Jeffs N J, et al. EXAFS studies of Mg doped InN grown on Al2O3 [J]. Mater Sci Eng,1999,59(1):218.
13 Mamutin V V, Vekshin V A, Davydov V Y, et al. Mg-dped hexagonal InN/Al2O3 films grown by MBE [J]. Physlca Status Solidi A,1999,176(1):373.
14 Jones R E, Yu K M, Li S X, et al. Evidence for p-type doping of InN [J]. Phys Rev Lett,2006, 96(12):125505.
15 Cimalla V, Niebelschütz M, Ecke G, et al. Surface band bending at nominally undoped and Mg-doped InN by auger electron spectroscopy [J]. Phys Status Solidi A,2006, 203(1):59.
16 Wang X Q, Che S B, lshitani Y, et al. Growth and propertles of Mg-polar InN films [J]. Appl Phys Lett,2007,90(20):201913.
17 Sch?che S, Hofmann T, Darakchieva V, et al. Free-charge carrier parameters of n-type,p-type and commpensated InN∶Mg determined by infrared spectroscopic ellipsometry [J]. Thin Solid Films,2013, 571:384.
18 Ma N, Wang X Q, Xu F J, et al. Anomalous hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction [J]. Appl Phys lett,2010,97(22):222114.
19 Wang J L, Wu X S, Dai X Q, et al. First-principles study of Sr adsorption on InN (0001)[J]. Eur Phys J B,2010,73(1):75.
20 Wang J L, Wu X S, Dai X Q, et al. Atomic structure for Mg on InN (0001) surface [J]. Phys Lett A,2009,373(20):1796.
21 Wang J L, Wu X S, Dong J M, et al. The adsorption of Be on the surface of (0001) InN [J]. Appl Surf Sci,2008,255(5):2533.
22 Xie Q Y, Xie W M, Wang J L, et al. Detecting p-type conduction in Ba-doped InN [J], Appl Phys Lett,2013,102(4):042109.
23 Wu J, Walukiewicz W, Yu K M, et al. Unusual properties of the fundamental band gap of InN [J]. J Appl Phys,2002,80(21):3967.
24 Choi M A, Mayer S, Bierwagen O, et al. Electrical and optical pro-perties of p-type InN [J]. J Appl Phys,2011,110(12):123707.
25 Wang J L, Tang G, Wu X S, et al. InN doped with Zn: Bulk and surface investigation from first principles [J]. Solid State Commun,2012,152(13):1168.
26 Xie W M, Xie Q Y, Zhu H P, et al. p-type conduction in Zn-ion implanted InN films [J]. J Phys D: Appl Phys,2015,48(21):042109.
27 Zhao S, Salehzadeh O, Alagha S, et al. Probing the electrical transport properties of intrinsic InN nanowires [J]. Appl Phys Lett,2013,102(7):073102 .
28 Zhao S, Fathololoumi S, Bevan K H, et al. Tuning the surface charge properties of epitaxial InN nanowires [J]. Nano Lett,2012,12(6):2877.
29 Zhao S, Le B H, Liu D P, et al. p-Type InN nanowires [J]. Nano Lett,2013,13(11):5509.
30 Zhang K C, Li Y F, Liu Y, et al. Density functional study on the ferromagnetism of alkaline earth doped InN [J]. J Alloys Compd,2015,625:101.
31 Ney A, Rajaram R, Parkin S S P, et al. Experimental investigation of the metastable magnetic properties of Cr-doped InN [J]. Phys Rev B,2007,76:035205.
32 Meng X Q, Chen Z H, Xia Q L, et al. Ferromagnetism in cubic InN∶Mn nanocrystals induced by surface Mn atoms [J]. RSC Adv,2014,4(82):43582.
33 Guan X H, Cai N N, Yang C H,et al. Magnetic properties of ZnO nanowires with Li dopants and Zn vacancies [J]. Thin Solid Films,2016,605:273.
34 Zarhri Z, Houmad M, Ziat Y, et al. Ab-initio study of magnetism behavior in TiO2 semiconductor with structural defects [J]. J Magnetism Magnetic Mater,2016,406:212.
35 Song B, Zhu K X, Liu J, et al. Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN [J]. J Mater Chem,2010,20(20):9935.
36 Basanta R, Mahesh K, Bhat T N, et al. Observation of room temperature ferromagnetism in InN nanostructures [J]. J Nanosci Nanotechnol,2015,14(6):4426.
37 Guo Jianyun. First principles study of typical Ⅲ nitride semiconductor materials[D]. Wuhan: China University of Geoscience,2008.
郭建云. 典型Ⅲ族氮化物半导体材料第一性原理研究[D]. 武汉: 中国地质大学, 2008.
38 Lu H, Schaff W J, Eastman L F, et al. Surface charge accumulation of InN films grown by molecular-beam epitaxy [J]. J Appl Phys Lett,2003,82(11):1736.
39 Mahboob I, Veal T D, et al. Intrinsic electron accumulation at clean InN surfaces [J]. Phys Rev Lett,2004,92(3):036804.
40 Nagata T, Koblmuller G, Bierwagen O, et al. Surface structure and chemical states of a-plane and c-plane InN films [J]. J Appl Phys,2009,95(13):132104.
41 Sata Y, Sato S. Growth of InN thin films by hydride vapor phase epi-taxy [J]. J Cryst Growth 1994,144:16.
42 Xie Q X, Gu M Q, Huang L, et al. Defect-induced room temperature ferromagnetism in un-doped InN film [J]. AIP Advances,2012,2(1):012185.