化学气相沉积制备大面积高质量石墨烯的研究进展<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.03.022

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Abstract Graphene, as a new kind of carbonaceous materials, is formed by the close accumulation of a single layer of carbon atoms. It has many unique properties such as electricity, photology, thermology and mechanics. Among all the methods for preparation of graphene, chemical vapor deposition (CVD) is the most likely to achieve controllable preparation of a large-area and high-qua-lity graphene. In this paper, we mainly overview the influence factors of large-area and high-quality graphene prepared by CVD, including substrate, carbon source and growth conditions (gas flow rate, growth temperature, plasma power, growth pressure, deposition time, cooling rate, etc). Finally, the development direction of the preparation of graphene by CVD method is proposed.

Key words： graphene chemical vapor deposition substrate carbon source growth conditions

Published: 10 February 2017 Online: 2018-05-02

CLC number:

TB321

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	Articles by authors
	SHI Xiaodong
	WANG Wei
	YIN Qiang
	LI Chunjing

Cite this article:

SHI Xiaodong,WANG Wei,YIN Qiang, et al. Research Progress of Large-area and High-quality Graphene Prepared by Chemical Vapor Deposition[J]. Materials Reports, 2017, 31(3): 136-142.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.03.022 OR https://www.mater-rep.com/EN/Y2017/V31/I3/136

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