RESEARCH PAPER |
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Temperature Rising in VO2 Thin Films Under Irradiation of Mid-infrared Laser Based on External Heat Source |
HOU Dianxin1,2,3, LU Yuan1,2,3, LIU Zhiwei1,2,3, HU Jie1,2,3
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1 Electronic Engineering Institute of PLA, Hefei 230037; 2 Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, Hefei 230037; 3 State Key Laboratory of Pulsed Power Laser Technology, Hefei 230037 |
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Abstract The VO2 thin film has shown a great significance in the field of mid-infrared laser protection. To research the cumulative effects of temperature rise of VO2 thin films under the irradiation of mid-infrared laser and to overcome the low power difficulty, a kind of external heat source method was designed. At first, the temperature accumulation of VO2 thin film under mid-infrared nanosecond pulse laser irradiation at different temperature of external heat source and different power density was simulated by ANSYS software and verified in practice. It was shown that the laser power density, which could induce phase transition temperature within a certain time (100 s), decreased gradually with the increase of external heat source temperature. The essential temperature could be also reduced by increasing laser power density. And both of them could improve the temperature rising rate of VO2 thin films. Then the temperature accumulation effect of VO2 thin films irradiated by different mid-infrared nanosecond pulse laser parameters under the condition of 40 ℃ external heat source temperature and 1 W/mm2 infrared laser power density was researched. The results showed that expanding laser pulse width, increasing repetition frequency and increasing facula radius could effectively increase the temperature rising rate of VO2 thin films.
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Published: 25 December 2017
Online: 2018-05-08
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