| FERROELECTRIC AND FERROMAGNETIC MATERIALS |
|
|
|
|
|
| Structural and Physical Properties of Bi0.975La0.025Fe0.975Ni0.025O3 Thin Film Prepared by Sol-gel Method |
| DAI Xiuhong1,2, ZHAO Hongdong1, ZHANG Yusheng2, GE Dayong2, SONG Jianmin2, LIU Baoting2
|
1 School of Electronic and Information Engineering, Hebei University of Technology,Tianjin 300401;
2 College of Physics Science & Technology, Hebei University, Baoding 071002; |
|
|
|
|
Abstract Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) ferroelectric film was fabricated on Pt/Ti/SiO2/Si (111) substrate by a sol-gel process. X-ray diffraction system (XRD), atomic force microscope (AFM), piezoresponse force microscopy (PFM) were used to characterize the crystal structure, morphology, and ferroelectric domain information. It was found that the well-crystallized perovskite BLFNO film is polycrystalline with grains almost uniformly distributed. Very obvious domain structures could be observed from the PFM image, indicating different orientaions of the grains related to ferroelectric domains. Moreover, it was found that Pt/BLFNO/Pt ferroelectric capacitor possesses very good ferroelectric properties, as the remnant polariztion is 74.3 μC/cm2 under 828 kV/cm electric field, which demonstrated that the La and Ni co-doping does not obviously decrease the remnant polarization of the capacitor. Compared to the pure BFO film, La and Ni co-doping can lower the leakage current density of Pt/BLFNO/Pt capacitor to the magnitude of 10-4 A/cm2 under 277.8 kV/cm electric field. The magnetic hysteresis loops of the BLFNO film measured at room temperature confirmed the antiferromagnetic property of Bi0.975La0.025Fe0.975Ni0.025O3 film.
|
|
Published: 10 August 2017
Online: 2018-05-04
|
|
|
|
|
1 Wang J, Neaton J B, Zheng H, et al. Epitaxial BiFeO3 multiferroic thin film heterostructures [J]. Science,2003, 299:1719.
2 Chen Bin, Li Mi, Liu Yiwei, et al. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors [J]. Nanotechnology,2011,22:195201.
3 Tian G, Zhao L, Lu Z X, et al. Fabrication of high-density BiFeO3 nanodot and anti-nanodot arrays by anodic alumina template-assisted ion beam etching [J]. Nanotechnology, 2016,27(48):485302.
4 Cao D W, Wang C Y, Zheng F G, et al. High-efficiency ferroelectric-film solar cells with an n-type Cu2O cathode buffer layer [J]. Nano Lett,2012,12:2803.
5 Yang C H, Seidel J, et al. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films [J]. Nat Mater,2009,8:485.
6 Kumar M, Arora M, Chauhan S, et al. Raman spectroscopy probed spin-two phonon coupling and improved magnetic and optical properties in Dy and Zr substituted BiFeO3 nanoparticles [J]. J Alloys Compd,2017,692:236.
7 Fan Z, Yao K, Wang J. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO3/Pt heterostructure [J]. Appl Phys Lett,2014,105:162903.
8 Yang S Y, Seidel J, Byrnes S J, et al. Above-bandgap voltages from ferroelectric photovoltaic devices [J]. Nanotechnology,2010,5:143.
9 Wang C, Jin K J, Xu Z T, et al. Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films [J]. Appl Phys Lett,2011,98(19):192901.
10 Giampietri A, Drera G, Pis I. Tracking the amorphous to epitaxial transition in RF-sputtered cubic BFO-STO heterojunctions by means of X-ray photoelectron diffraction [J]. Appl Phys Lett,2016,109(13):132903.
11 Luo J M, Lin S P, Zheng Y, et al. Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition [J]. Appl Phys Lett,2012,101(6):062902.
12 Scott J F. Applications of modern ferroelectrics [J]. Science, 2007,315:954.
13 Scott J F, Paz de Araujo C A. Ferroelectric memories [J]. Science,1989,246:1400.
14 Yang H, Wang Q, Wang H, et al. Oxygen concentration and its effect on the leakage current in BiFeO3 thin films [J].Appl Phys Lett,2010,96:012909.
15 Zhao Q X, Ma J K, Wei D Y, et al. Epitaxial SrRuO3/BiFeO3/SrRuO3 heterostructure sputtered at low temperature [J]. J Cryst Growth,2011,316:71.
16 Banerjee P, Franco A. Enhanced dielectric and magnetic properties in multiferroic Bi0.99Y0.01Fe0.99Ni0.01O3 ceramic [J]. Mater Lett,2016,184:17.
17 Wang Shuai, Li Kunfang, Fang Ting, et al. Research of room-temperature ferroelectric properties for the Pb doped BiFeO3 [J]. Mater Rev: Res,2014,28(12):237(in Chinese).
汪帅,李坤芳,方婷,等. Pb离子掺杂多铁性材料BiFeO3的铁电性研究 [J]. 材料导报:研究篇,2014,28(12):237.
18 Yu B F, et al. Enhanced multiferroic properties of the high-valence Pr doped thin film [J]. Appl Phys Lett,2008,93:182909.
19 Singh S K, Tomy C V, Era T, et al. Improved multiferroic properties in Sm-doped BiFeO3 thin films deposited using chemical solution deposition method [J]. J Appl Phys,2012,111:102801.
20 Wang H J, Wang S Y, Liu W F, et al. Study on abnormal phenomenon about enhanced electrical conductivity of Bi1-xBaxFeO3 ceramics [J]. Int J Mod Phys B,2014,28:1450009.
21 Hai X, et al. Exchange bias-like phenomenon in Lu doped La0.1Bi0.9FeO3 ceramics [J]. Int J Mod Phys B,2014,28:1350194.
22 Kawae T, Tsuda H, Naganuma H, et al. Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn cosubstitution and their ferroelectric properties [J]. Jpn J Appl Phys,2008,47:7586.
23 Qi X D, Dho J, Tomov R, et al. Greatly reduced leakage current and conduction mechanism in aliovalent-ion-doped BiFeO3 [J]. Appl Phys Lett,2005,86:062903.
24 Zheng Y J, Tan G Q, Xia A. Structure and multiferroic properties of multi-doped Bi1-xErxFe0.96Mn0.02Co0.02O3 thin films [J]. J Alloys Compd,2016,684:438.
25 Yang K G, Zhang Y L, Yang S H, et al. Structural, electrical, and magnetic properties of multiferroic thin films [J]. J Appl Phys,2010,107:124109.
26 Yu B F, Li M Y, Wang J, et al. Enhanced electrical properties in multiferroic BiFeO3 ceramics co-doped by La3+ and V5+ [J]. J Phys D,2008,41:185401.
27 Chakrabarti K, Das K, Sarkar B, et al. Enhanced magnetic and dielectric properties of Eu and Co co-doped BiFeO3 nanoparticles [J]. Appl Phys Lett,2012,101:042401.
28 Singh K,et al. Reduced leakage current in La and Ni codoped BiFeO3 thin films [J]. Appl Phys Lett, 2007,91:112913.
29 Wu J G, Wang J, Xiao D Q, et al. Leakage mechanism of cation-modified BiFeO3 thin film [J]. AIP Adv,2011,1:022138.
30 Peng Z W, Liu B T, Zhu H J, et al. Effect of purple light on the ferroelectric and transport properties of epitaxial Mn-doped BiFeO3 film [J]. Phys Status Solidi A,2012,209:1451.
31 Wang K M, Li L, Su Y T, et al. Epitaxial BiFe0.95Mn0.05O3 film prepared by sol-gel method combined with rapid thermal annealing [J]. Funct Mater Lett,2014,7:1450041.
32 Tredgold R H. Space charge conduction in solids [M]. Amsterdam:Elsevier,1966.
33 Mott N F, Gurney R W. Electronic processes in ionic crystals[M]. Oxford: Clarendon,1940.
34 Lamb D R. Electric conduction mechanisms in thin insulating films[M].London: Methuen,1967.
35 Zubko P, Jung D J, Scott J F. Electrical characterization of PbZr0.4-Ti0.6O3 capacitors [J]. J Appl Phys,2006,100:114113.
36 Bai F M, Wang J L, Wuttig M, et al. Destruction of spin cycloid in (111)c-oriented BiFeO3 thin films by epitiaxial constraint: Enhanced polarization and release of latent magnetization [J]. Appl Phys Lett,2005,86:032511.
37 Lee Y H, Wu J M, Lai C H. Influence of La doping in multiferroic properties of BiFeO3 thin films [J]. Appl Phys Lett,2006,88:042903. |
|
|
|
渝公网安备50019002502923号 © Editorial Office of Materials Reports.
2017, Vol. 31 
