溅射Cu-Zn-Sn金属预制层后硫(硒)化法制备Cu2ZnSn(SxSe1-x)4薄膜及其光伏特性

doi:10.11896/j.issn.1005-023X.2018.09.003

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Abstract By applying several annealing schemes (sulfurization, selenization, sulfurization at various temperatures→selenization) to the annealing process of the magnetron sputtered Cu-Zn-Sn coating, this work made a successful attempt to develop an annealing scheme that enables the production of CZTSSe thin film on the basis of merely a presputtered metallic coating. We conducted the morphological analyses upon the Cu₂ZnSn(S_xSe_1-x)₄ films formed through different annealing schemes and revealed that a relatively low sulfurization temperatures can benefit the flatness and densification of the resultant film by attenuating the heat-induced porosification effect. A comparative study was then carried out upon the effect of the sulfurization temperature (200 ℃, 300 ℃, 400 ℃, 500 ℃) on the properties of Cu₂ZnSn(S_xSe_1-x)₄ thin films, by measuring the films’ composition, morphology, structure and crystallinity via XRF, SEM, XRD and Raman scattering. Among the above competitors, the Cu₂ZnSn(S_xSe_1-x)₄ film obtained with 300 ℃ sulfurization→selenization exhibits the most favorable morphology and crystallinity, as well as a power conversion efficiency of 2.09% which far outperforms the one with 500 ℃ sulfurization→selenization (0.94%) owing to the boost of short-circuit current and fill factor.

Key words： thin film solar cell Cu₂ZnSn(S_xSe_1-x)₄ presputtering sulfurization selenization annealing scheme

Published: 10 May 2018 Online: 2018-07-06

CLC number:

O472.8

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	Articles by authors
	LIU Yike
	TANG Yaqin
	JIANG Liangxing
	LIU Fangyang
	QIN Qin
	ZHANG Kun

Cite this article:

LIU Yike,TANG Yaqin,JIANG Liangxing, et al. Photovoltaic Characteristics of Cu₂ZnSn(S_xSe_1-x)₄ Thin Films Synthesizedvia the Process of Cu-Zn-Sn Presputtering and SubsequentSulfurization (Selenization) Annealing[J]. Materials Reports, 2018, 32(9): 1412-1416.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2018.09.003 OR https://www.mater-rep.com/EN/Y2018/V32/I9/1412

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