悬浮石墨烯的制备、性能及应用研究<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.09.007

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Abstract Graphene, as a new 2D material, possesses excellent properties in electrical, optical, thermal and mechanical features. Research on graphene has also attracted wide attentions of many researchers. Meanwhile, suspended graphene displays its intrinsic properties with fewer impurities and smaller influence from outside interference. Suspended graphene owns the unique advantages in studying graphene's electronic mobility, heat resistance, mechanical properties and plays significant role in improving the performance of microelectronic devices. Research of suspended graphene and its application in the field of microelectronics are reviewed and the application prospect of suspended graphene is pointed out.

Key words： suspended graphene less impurities smaller disturbance intrinsic properties microelectronic

Published: 10 May 2017 Online: 2018-05-03

CLC number:	TB321
	O469

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	Articles by authors
	ZHAO Mingjie
	MEN Chuanling
	CAO Jun
	ZHANG Ziyuan

Cite this article:

ZHAO Mingjie,MEN Chuanling,CAO Jun, et al. Fabrication, Properties and Application of Suspended Graphene[J]. Materials Reports, 2017, 31(9): 57-63.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.09.007 OR https://www.mater-rep.com/EN/Y2017/V31/I9/57

[1]	Novoseov K S, Geim A K, Morozov S V, et al.Electric field effect in atomically thin carbon films[J]. Science,2004,306(5696):666.
[2]	Berger C, Song Z, Li T, et al.Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectro-nics[J]. J Phys Chem B,2004,108(52):19912.
[3]	Bolotin K I, Sikes K J, Jiang Z, et al.Ultrahigh electron mobility in suspended graphene[J]. Solid State Commun,2008,146(9):351.
[4]	Morozov S V, Novoselov K S, Katsnelson M I, et al.Giant intrinsic carrier mobilities in graphene and its bilayer[J]. Phys Rev Lett,2008,100(1):016602.
[5]	Chen J H, Jang C, Xiao S, et al.Intrinsic and extrinsic performance limits of graphene devices on SiO2[J]. Nat Nanotechnol,2008,3(4):206.
[6]	Cai W, Moore A L, Zhu Y, et al.Thermal transport in suspended and supported monolayer graphene grown by chemical vapor deposition[J]. Nano Lett,2010,10(5):1645.
[7]	Xu X, Pereira L F C, Wang Y, et al. Length-dependent thermal conductivity in suspended single-layer graphene[J]. Nature Commun,2014,5:3689.
[8]	Dorgan V E, Bae M H, Pop E.Mobility and saturation velocity in graphene on SiO2[J]. Appl Phys Lett,2010,97:487.
[9]	Geim A K.Graphene:Status and prospects[C]//International of Vacuum Congress.2010:1530.
[10]	Donaldson L.Graphene: invisible to water: Carbon[J]. Mater Today,2012,15(3):82.
[11]	Chen J H, Ishigami M, Jang C, et al.Printed praphene circuits[J]. Electrocomponent Sci Technol,2008, 19(21):3623.
[12]	Lin Y M, Jenkins K A, Valdesgarcia A, et al.Operation of graphene transistors at gigahertz frequencies[J]. Nano Lett,2009,9(1):422.
[13]	Schwierz F.Graphene transistors[J]. Nat Nanotechnol,2010,5(7):487.
[14]	Wang X, Zhi L, Müllen K.Transparent, conductive graphene electrodes for dye-sensitized solar cells[J]. Nano Lett,2008,8(1):323.
[15]	Stolyarova E, Rim K T, Ryu S, et al.High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface.[J]. Proceedings National Academy of Sciences of the United States of America,2007,104(22):9209.
[16]	Zeitler U, Giesbers A J M, Mccollam A, et al. High-field electronic properties of graphene[J]. J Low Temp Phys,2010,159(1-2):238.
[17]	Chen J H, Jang C, Adam S, et al.Charged-impurity scattering in graphene[J]. Nat Phys,2007,4(5):377.
[18]	Kusmartsev F V, Wu W M, Pierpoint M P, et al.Application of graphene within optoelectronic devices and transistors[M]//Applied Spectroscopy and the Science of Nanomaterials. Springer Singapore,2014:191.
[19]	Varykhalov A, Sánchezbarriga J, Shikin A M, et al.Electronic and magnetic properties of quasifreestanding graphene on Ni[J]. Phys Rev Lett,2008,101(15):6456
[20]	Lee C, Wei X, Kysar J W, et al.Measurement of the elastic properties and intrinsic strength of monolayer graphene[J]. Science,2008,321(5887):385.
[21]	Song X, Oksanen M, Sillanpa M A, et al.Stamp transferred suspended graphene mechanical resonators for radio frequency electrical readout[J]. Nano Lett,2011,12(1):198.
[22]	Avouris P, Dimitrakopoulos C.Graphene: Synthesis and applications[J]. Mater Today,2012,5863(15):84.
[23]	Jiang Shengwei, Shi Shuai, Yuan Jiaojiao, et al.Fabrication and modeling of a suspended graphene pressure sensor[J].Transducer Microsystem Technol,2014,33(5):111(in Chinese).蒋圣伟, 师帅, 袁娇娇,等. 一种悬浮石墨烯压力传感器的制造与建模[J]. 传感器与微系统,2014,33(5):111.
[24]	Zande A M, Barton R A, Alden J S, et al.Large-scale arrays of single-layer graphene resonator[J]. Nano Lett,2010,10(12):4869.
[25]	Ismach A, Druzgalski C, Penwell S, et al.Direct chemical vapor deposition of graphene on dielectric surfaces[J]. Nano Lett,2010,10(5):1542.
[26]	Cullinan M A, Gorman J J.Transfer-free, wafer-scale fabrication of graphene-based nanoelectromechanical resonators[C]//Microsystems for Measurement and Instrumentation (MAMNA). IEEE,2013:3.
[27]	Lindvall N, Sun J, Yurgens A.Transfer-free fabrication of suspended graphene grown by chemical vapor deposition[C]//2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE,2012:19.
[28]	Hurst A M, Lee S, Petrone N, et al.A transconductive graphene pressure sensor[C]//Transducers & Eurosensors Xxvii: the, International Conference on Solid-State Sensors, Actuators and Microsystems. 2013:586.
[29]	Lee G H, Cooper R C, An S J, et al.High-strength chemical-vapor-deposited graphene and grain boundaries[J]. Science,2013,340(6136):1073.
[30]	Tomori H, Kanda A, Goto H, et al.Introducing nonuniform strain to graphene using dielectric nanopillars[J]. Appl Phys Express,2011,4(7):075102.
[31]	Koenig S P, Boddeti N G, Dunn M L, et al.Ultrastrong adhesion of graphene membranes[J]. Nat Nanotechnol,2011,6(9):543.
[32]	Bunch J S, Verbridge S S, Alden J S, et al.Impermeable atomic membranes from graphene sheets[J]. Nano Lett,2008,8(8):2458.
[33]	Ni Z H, Yu T, Lu Y H, et al.Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening[J]. ACS Nano,2008,2(11):2301.
[34]	Pereira V M, Neto A H C, Peres N M R. Tight-binding approach to uniaxial strain in graphene[J]. Phys Rev B,2009,80(4):045401.
[35]	Li X, Wang X, Zhang L, et al.Chemically derived, ultrasmooth graphene nanoribbon semiconductors[J]. Science,2008,319(5867):1229.
[36]	Pisana S, Lazzeri M, Casiraghi C, et al.Breakdown of the adiabatic born\|[ndash]\|oppenheimer approximation in graphene[J]. Nat Mater,2007,6(3):198.
[37]	Lee J, Zheng X, Roberts R C, et al.Scanning electron microscopy characterization of structural features in suspended and non-suspended graphene by customized CVD growth[J]. Diamond Related Mater,2015, 54:64.
[38]	Zhang H, Huang J W, Velasco J, et al.Transport in suspended monolayer and bilayer graphene under strain: A new platform for material studies[J]. Carbon,2014,69:336.
[39]	Singh V, Sengupta S, Solanki H S, et al.Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators[J]. Nanotechnology,2010,21(16):165204.
[40]	Smith A D, Vaziri S, Delin A, et al.Strain engineering in suspended graphene devices for pressure sensor applications[C]//2012 13th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2012:21.
[41]	Miyazaki H, Tsukagoshi K, Kanda A, et al.Influence of disorder on conductance in bilayer graphene under perpendicular electric field[J]. Nano Lett,2010,10(10):3888.
[42]	Cocco G, Cadelano E, Colombo L.Gap opening in graphene by shear strain[J]. Phys Rev B,2010, 81(24):241412.
[43]	Wang Z, Devel M.Periodic ripples in suspended graphene[J]. Phys Rev B,2011,83(12):125422.
[44]	Aydin O I, Hallam T, Thomassin J L, et al.Challenges in suspending CVD graphene: More than capillary effects[C]//2014 15th International Conference on Ultimate Integration on Silicon (ULIS). IEEE,2014:33.
[45]	Childres I, Jauregui L A, Foxe M, et al.Effect of electron-beam irradiation on graphene field effect devices[J]. Appl Phys Lett,2010,97(17):173109.
[46]	Smith A D, Vaziri S, et al.Pressure sensors based on suspended graphene membranes[J]. Solid-State Electron,2013,88:89.
[47]	Smith A D, Niklaus F, Paussa A, et al.Electromechanical piezoresistive sensing in suspended graphene membranes[J]. Nano Lett,2013,13(7):3237.
[48]	Li P, Zhang B, Cui T.Towards intrinsic graphene biosensor: A label-free, suspended single crystalline graphene sensor for multiplex lung cancer tumor markers detection[J]. Biosensors Bioelectron,2015,72:168.
[49]	Vandeparre H, Piñeirua M, Brau F, et al.Wrinkling hierarchy in constrained thin sheets from suspended graphene to curtains[J]. Phys Rev Lett,2011,106(22):1351.
[50]	Guimares M H D, Veligura A, Zomer P J, et al. Spin transport in high-quality suspended graphene devices[J]. Nano Lett,2012,12(7):3512.
[51]	Bao W, Miao F, Chen Z, et al.Controlled ripple texturing of suspended graphene and ultrathin graphite membranes[J]. Nature Nanotechnol,2009,4(9):562.
[52]	Jang C, Adam S, Chen J H, et al.Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short-and long-range potential scattering[J]. Phys Rev Lett,2008,101(14):146805.
[53]	Guinea F, Horovitz B, Doussal P L.Gauge field induced by ripples in graphene[J]. Phys Rev B Condensed Matter,2008,77(20):998.
[54]	Gong S C, Lee C.Analytical solutions of sensitivity for pressure microsensors[J]. IEEE Sensors J, 2001,1(4):340.
[55]	Rickhaus P, Maurand R, Liu M H, et al.Ballistic interferences in suspended graphene[J]. Nat Commun, 2013,4(4):2342.
[56]	Du X, Skachko I, Barker A, et al.Approaching ballistic transport in suspended graphene[J]. Nat Nanotechnol, 2008,3(8):491.
[57]	Sarma S D, Adam S, Hwang E H, et al.Electronic transport in two-dimensional graphene[J]. Rev Modern Phys,2011,83(2):407.
[58]	Ni Z H, Yu T, Luo Z Q, et al.Probing charged impurities in suspended graphene using Raman spectroscopy[J]. ACS Nano,2009,3(3):569.
[59]	Ando T.Screening effect and impurity scattering in monolayer graphene[J]. J Phys Soc Jpn,2006, 75(7):074716.
[60]	Nomura K, MacDonald A H. Quantum Hall ferromagnetism in graphene[J]. Phys Rev Lett,2006, 96(25):256602.
[61]	Martin J, Akerman N, Ulbricht G, et al.Observation of electron-hole puddles in graphene using a scanning single electron transistor[J]. Nat Phys,2007,4(2):144
[62]	Jena D, Konar A.Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering[J]. Phys Rev Lett,2007,98(13):136805.
[63]	Yamashiro Y, Ohno Y, Maehashi K, et al.Floating-bridge structure of graphene with ionic-liquid gate[J]. Phys Status Solidi,2013,10(11):1604.
[64]	Svensson J, Lindahl N, Yun H, et al.Carbon nanotube field effect transistors with suspended graphene gates[J]. Nano Lett,2011,11(9):3569.