金属与半导体肖特基接触势垒模型及其载流子传输机制的研究进展

doi:10.11896/j.issn.1005-023X.2017.03.010

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Abstract Schottky contact was an important application in the field of the rectifier and photoelectric detection, due to its excellent rectifying behavior. In this paper, the formation mechanism, together with corresponding mathematical model and influencing factors of the Schottky contact between metal and semiconductor was reviewed in detail. The literatures showed that the formation of Schottky contact was caused by Fermi level pinning which was caused by phase formation and the existence of polarization at the interface region. Meanwhile, the thermionic emission model was the most widely used to explain the carrier transport mechanism at the interface of Schottky contact. With the further study on the carrier transport mechanism at the interface contact, the thermio-nic-diffusion and thermal field emission model were proposed by researchers. In addition, the related research exhibited that the fast annealing can lead to atoms diffusion, rearrangement and phase formation at the interface of the Schottky contact, which has an important influence on the stability of Schottky contact.

Key words： Schottky junction barrier model carrier transport mechanism contact interface fast annealing

Published: 10 February 2017 Online: 2018-05-02

CLC number:

TN362

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	Articles by authors
	LI Yapeng
	LI Yingfeng
	HE Zhirong
	GUO Congsheng
	YAN Qunmin
	XU Feng

Cite this article:

LI Yapeng,LI Yingfeng,HE Zhirong, et al. Progress of Schottky Contact Model and Carrier Transport Mechanism at the Interface Between Metal and Semiconductor[J]. Materials Reports, 2017, 31(3): 57-62.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.03.010 OR https://www.mater-rep.com/EN/Y2017/V31/I3/57

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