热氧化ZnS∶Ga制备ZnO∶Ga薄膜及其光致发光性能<sup>*</sup>

doi:10.11896/j.issn.1005-023X.2017.018.003

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Abstract Ga-doped ZnS (ZnS∶Ga) films with different Ga content were prepared by chemical bath deposition, and then the thermal oxidation in the air was subsequently performed for the growth of Ga-doped ZnO (ZnO∶Ga) films. The microstructures, surface compositions, and photoluminescent properties of the ZnO∶Ga films were investigated. The results showed that the microstructure, stoichiometric ratio, and the relative content of oxygen vacancy of ZnO films were altered due to Ga doping, which then affected the photoluminescent properties of ZnO films. The increase of Ga content led to improved compactness and refined particle size of the product, resulted in a more near-stoichiometric composition of ZnO, lowered the relative content of oxygen vacancy, also enhanced the I_UV/I_Vis ratio.

Key words： ZnS film ZnO film Ga doping thermal oxidation photoluminescence

Published: 25 September 2017 Online: 2018-05-08

CLC number:

TB43

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	Articles by authors
	ZHANG Xiaohong
	YANG Qing
	ZHANG Xuchen
	MA Yan
	YI Xiaoyin

Cite this article:

ZHANG Xiaohong,YANG Qing,ZHANG Xuchen, et al. Preparation of ZnO∶Ga Films by Thermal Oxidation of ZnS∶Ga and Their Photoluminescent Properties[J]. Materials Reports, 2017, 31(18): 11-15.

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https://www.mater-rep.com/EN/10.11896/j.issn.1005-023X.2017.018.003 OR https://www.mater-rep.com/EN/Y2017/V31/I18/11

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